Intracavity contacted long wavelength VCSELs with buried antimony layers

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	Intracavity contacted long wavelength VCSELs with buried antimony layers
其他题名	Intracavity contacted long wavelength VCSELs with buried antimony layers
	LIN, CHAO-KUN; CORZINE, SCOTT W.; TAN, MICHAEL R. T.; HOUNG, YU-MIN
	2002-10-02
专利权人	AGILENT TECHNOLOGIES, INC.
公开日期	2002-10-02
授权国家	欧洲专利局
专利类型	发明申请
摘要	A vertical cavity surface-emitting laser (400, 500), and method of fabricating such a laser, for use in an optical communication system (100) including an optical cavity (223, 323) arranged between a pair of distributed Bragg reflectors (402/404, 502/504), an active region (217) in the optical cavity, and an oxidized current confinement layer (215, 315) arranged on one side of the active layer. The current confinement layer includes a component, such as antimony, that is segregated into a conductive layer on one side (221, 321) of the current confinement layer during oxidation.
其他摘要	一种垂直腔表面发射激光器（400,500），以及制造这种激光器的方法，用于包括布置在一对分布式布拉格反射器（402）之间的光学腔（223,323）的光通信系统（100）中。/ 404,502 / 504），光学腔中的有源区（217）和布置在有源层一侧的氧化电流限制层（215,315）。电流限制层包括诸如锑的组分，其在氧化期间在电流限制层的一侧（221,321）上分离成导电层。
主权项	A vertical cavity surface-emitting laser (400, 500), comprising: an optical cavity (223, 323) arranged between a pair of distributed Bragg reflectors (402/404, 502/504); an active region (217) in the optical cavity; a current confinement layer (215, 315) arranged on one side of the active layer; and wherein said current confinement layer includes at least one segregated component material (221, 321) that is electrically conductive.
申请日期	2002-01-07
专利号	EP1246328A2
专利状态	失效
申请号	EP2002000400
公开（公告）号	EP1246328A2
IPC 分类号	H01S5/02 \| H01S5/042 \| H01S5/183
专利代理人	-
代理机构	LIESEGANG, EVA
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65051
专题	半导体激光器专利数据库
作者单位	AGILENT TECHNOLOGIES, INC.
推荐引用方式 GB/T 7714	LIN, CHAO-KUN,CORZINE, SCOTT W.,TAN, MICHAEL R. T.,et al. Intracavity contacted long wavelength VCSELs with buried antimony layers. EP1246328A2[P]. 2002-10-02.

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