Method and structure for low stress oxide VCSEL

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	Method and structure for low stress oxide VCSEL
其他题名	Method and structure for low stress oxide VCSEL
	LIN, CHAO-KUN; CORZINE, SCOTT W.; TAN, MICHAEL R. T.
	2007-04-26
专利权人	AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.
公开日期	2007-04-26
授权国家	美国
专利类型	发明申请
摘要	The etched sidewalls of laterally oxidized VCSEL structures are coated with a dielectric film to inhibit oxidation of the DBR layers during the oxidation process. While oxidation of the DBR mirror layers is not completely eliminated, the number of DBR mirror layers that are oxidized is significantly reduced, thereby reducing the DBR oxide stress.
其他摘要	横向氧化的VCSEL结构的蚀刻侧壁涂覆有介电膜，以在氧化过程中抑制DBR层的氧化。虽然没有完全消除DBR镜层的氧化，但是氧化的DBR镜层的数量显着减少，从而降低了DBR氧化物应力。
主权项	A method for a low stress oxide VCSEL structure comprising: providing a substrate; forming a plurality of semiconductor layers on said substrate such that a first one of said plurality of semiconductor layers is an active layer comprising an active region and a second one of said plurality of semiconductor layers is a current confinement layer comprising an oxidizable material; forming a first reflector located on one side of said active layer and forming a second reflector on the opposite side of said active layer; forming a cavity having sidewalls, said cavity penetrating said first reflector and said second one of said plurality of semiconductor layers. depositing a conformal dielectric film on said sidewalls.
申请日期	2005-10-07
专利号	US20070091961A1
专利状态	失效
申请号	US11/246739
公开（公告）号	US20070091961A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65042
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	LIN, CHAO-KUN,CORZINE, SCOTT W.,TAN, MICHAEL R. T.. Method and structure for low stress oxide VCSEL. US20070091961A1[P]. 2007-04-26.