Manufacture of integrated phase-locked laser device

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	Manufacture of integrated phase-locked laser device
其他题名	Manufacture of integrated phase-locked laser device
	SHINOZAKI KEISUKE; FURUKAWA RYOZO; WATANABE NOZOMI
	1990-10-12
专利权人	OKI ELECTRIC IND CO LTD
公开日期	1990-10-12
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain an integrated phase-locked laser device which facilitates a high light output power basic supermode oscillation by a method wherein, after a wet-etching treatment, a dry-etching treatment which has high anisotropy is applied to form U-shaped trenches. CONSTITUTION:Trenches 51 are formed through a process wherein a current constriction layer 13 and an anti-meltback layer 15 are successively formed on a substrate 11 to form a foundation 48 and a process wherein mask layers 25 are formed on the non-waveguiding regions 19 of the foundation 48 and, after a wet-etching treatment is applied through the mask layers 25, a dry- etching treatment is applied through the mask layers 25. Therefore, the trenches 51 can be selectively formed to the thickness direction of the substrate 11 by the dry-etching treatment, so that the disappearance of the anti-meltback layer 15 caused by the wet-etching treatment can be suppressed and dimensional fluctuations caused by the growths of various components can be suppressed. With this constitution, an integrated phase-locked laser device which facilitates a high light output can be obtained.
其他摘要	目的：通过一种方法获得一种集成的锁相激光器件，该方法通过湿法刻蚀处理后的各种各向异性的干蚀刻处理形成U形沟槽，从而有利于高光输出功率的基本超模振荡。。组成：沟槽51通过一个过程形成，其中电流收缩层13和防退火层15连续形成在基板11上，以形成基础48和一个过程，其中掩模层25形成在非波导区域19上在通过掩模层25施加湿法蚀刻处理之后，通过掩模层25施加干蚀刻处理。因此，可以在基板11的厚度方向上选择性地形成沟槽51。通过干蚀刻处理，可以抑制由湿蚀刻处理引起的防退火层15的消失，并且可以抑制由各种成分的生长引起的尺寸波动。利用这种结构，可以获得便于高光输出的集成锁相激光器件。
主权项	-
申请日期	1989-03-28
专利号	JP1990253681A
专利状态	失效
申请号	JP1989075699
公开（公告）号	JP1990253681A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64942
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SHINOZAKI KEISUKE,FURUKAWA RYOZO,WATANABE NOZOMI. Manufacture of integrated phase-locked laser device. JP1990253681A[P]. 1990-10-12.

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