Semiconductor laser array device and manufacture thereof

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser array device and manufacture thereof
其他题名	Semiconductor laser array device and manufacture thereof
	YOSHIKAWA AKIO; SUGINO TAKASHI
	1986-01-27
专利权人	MATSUSHITA DENKI SANGYO KK
公开日期	1986-01-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable realization of a semiconductor laser array device which operates at a low threshold and is fabricated with a high degree of integration in a single crystal growth, by forming an active layer directly above recesses or projections so that the dimensions of the active layer in directions which are respectively parallel to the cavity resonator surface and the semiconductor junction surface are sufficient to provide two oscillation regions. CONSTITUTION:Stripe-shaped grooves are formed in the surface of a p type GaAs substrate 10 by chemical etching. Then, n type GaAs current blocking layers 11, 20 whose film thickness is smaller than the depth of the grooves are formed. A p type GaAs layer 12, a p type clad layer 13, an active layer 14, an n type clad layer 15 and an n type layer 16 are formed on the layers 11, 20. Although current concentrates on and near the part above each groove, as the current comes closer to the GaAs substrate 10, it diverges and flows along both side surfaces of the groove, thereby forming two laser oscillation regions within the groove. Thus, oscillations take place substantially simultaneously at or near a threshold of 70mA, and stable single transverse mode oscillation is obtained. The volume of each chip of this laser array is reduced to about half of that in a conventional laser array having the same number of laser oscillation regions. Thus, it is possible to reduce the size of the laser array device.
其他摘要	目的：通过在凹槽或凸起的正上方形成有源层，使有源层的尺寸成为可能，实现半导体激光器阵列器件的工作在低阈值工作，并在单晶生长中高度集成。在分别平行于空腔谐振器表面和半导体结表面的方向上，足以提供两个振荡区域。组成：通过化学蚀刻在p型GaAs衬底10的表面上形成条纹状凹槽。然后，形成膜厚度小于沟槽深度的n型GaAs电流阻挡层11,20。在层11,20上形成p型GaAs层12，p型覆层13，有源层14，n型覆层15和n型层16.尽管电流集中在每个凹槽上方的部分上和附近当电流靠近GaAs衬底10时，它沿着沟槽的两个侧表面发散并流动，从而在沟槽内形成两个激光振荡区域。因此，振荡基本上同时发生在70mA的阈值或接近70mA的阈值，并且获得稳定的单横模振荡。该激光器阵列的每个芯片的体积减小到具有相同数量的激光振荡区域的传统激光器阵列的体积的大约一半。因此，可以减小激光器阵列器件的尺寸。
主权项	-
申请日期	1984-07-05
专利号	JP1986018189A
专利状态	失效
申请号	JP1984137930
公开（公告）号	JP1986018189A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64826
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	YOSHIKAWA AKIO,SUGINO TAKASHI. Semiconductor laser array device and manufacture thereof. JP1986018189A[P]. 1986-01-27.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1986018189A.PDF（187KB）	专利		开放获取	CC BY-NC-SA	请求全文