Wavelength-tunable semiconductor laser and fabrication process thereof

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	Wavelength-tunable semiconductor laser and fabrication process thereof
其他题名	Wavelength-tunable semiconductor laser and fabrication process thereof
	KITAMURA MITSUHIRO; YAMAGUCHI MASAYUKI
	1996-01-16
专利权人	NEC CORPORATION
公开日期	1996-01-16
授权国家	加拿大
专利类型	发明申请
摘要	A wavelength-tunable semiconductor laser comprisesan active region including an active layer generating anoptical gain by injection of a current, a phase-controlregion including a tuning layer generating variation of arefraction index by injection of the current, and adistributed-Bragg-reflector region including a tuning layergenerating variation of a refraction index by injection ofthe current. The active region, the phase-control region andthe distributed-Bragg-reflector region are arranged inalignment in a resonance direction. A diffraction grating isprovided in the vicinity of the tuning layer of thedistributed-Bragg-reflector region. The wavelength-tunablesemiconductor laser includes means for uniformly injecting asecond current to the phase-control region and thedistributed-Bragg-reflector region. An optical-confinementfactor to the tuning layer of the phase-control region isgreater than an optical-confinement factor to the tuninglayer of the distributed-Bragg-reflector type.
其他摘要	波长可调半导体激光器包括：有源区域，包括通过注入电流产生光学增益的有源层，包括通过注入电流产生分光指数变化的调谐层的相位控制区域，以及分布布拉格反射体区域，该调谐层通过注入电流而产生折射率的变化。有源区，相位控制区和分布反射镜区在谐振方向上对准排列。衍射光栅设置在分布式布拉格反射器区域的调谐层附近。波长可调谐半导体激光器包括用于将第二电流均匀地注入到相位控制区域和分布反射镜区域的装置。相位控制区域的调谐层的光限制因子大于分布布拉格反射器类型的调谐层的光限制因子。
主权项	A wavelength-tunable semiconductor laser, comprising: an active region including an active layer generating an optical gain by injection of a current; a phase-control region including a tuning layer generating variation of a refraction index by injection of the current; a distributed-Bragg-reflector region including a tuning layer generating variation of a refraction index by injection of the current, said active region, said phase-control region and said distributed-Bragg-reflector region being arranged in alignment in a resonance direction; a diffraction grating provided in the vicinity of said tuning layer of said distributed-Bragg-reflector region; and, means for uniformly injecting a second current to said phase-control region and said distributed-Bragg-reflector region; an optical-confinement factor to said tuning layer of said phase-control region being greater than an optical-confinement factor to said tuning layer of said distributed-Bragg-reflector region.
申请日期	1995-07-14
专利号	CA2153909A1
专利状态	失效
申请号	CA2153909
公开（公告）号	CA2153909A1
IPC 分类号	H01S5/026 \| H01S5/042 \| H01S5/227 \| H01S5/00 \| H01S5/0625 \| H01S5/34 \| H01S5/10 \| H01S5/20 \| H01S3/18
专利代理人	-
代理机构	G. RONALD BELL & ASSOCIATES
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64799
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO,YAMAGUCHI MASAYUKI. Wavelength-tunable semiconductor laser and fabrication process thereof. CA2153909A1[P]. 1996-01-16.