LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES

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	LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
其他题名	LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
	CHAKRABORTY, ARPAN; LIN, YOU-DA; NAKAMURA, SHUJI; DENBAARS, STEVEN P.
	2010-12-09
专利权人	THE REGENTS OF THE UNIVERSTY OF CALIFORNIA
公开日期	2010-12-09
授权国家	美国
专利类型	发明申请
摘要	A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.
其他摘要	与常规激光二极管结构相比，生长在误切割非极性或半极性基板上的激光二极管具有较低的阈值电流密度和较长的受激发射波长，其中激光二极管的（1）n型层在氮载气中生长，（2）与其他器件层相比，量子阱层和势垒层以较慢的生长速率生长（能够在较高温度下生长p型层），（3）高Al含量的电子阻挡层使得上面的层生长在较高温度下的有源区，和（4）不对称AlGaN SPSLS允许高Al含有p-AlGaN层的生长。使用各种其他技术来改善p型层的导电性并使接触层的接触电阻最小化。
主权项	A method of fabricating a III-nitride laser diode (LD) structure, comprising: growing one or more III-nitride device layers for a LD on an off-axis surface of a nonpolar or semipolar III-nitride substrate.
申请日期	2010-06-07
专利号	US20100309943A1
专利状态	失效
申请号	US12/795360
公开（公告）号	US20100309943A1
IPC 分类号	H01S5/00 \| H01L21/20
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64745
专题	半导体激光器专利数据库
作者单位	THE REGENTS OF THE UNIVERSTY OF CALIFORNIA
推荐引用方式 GB/T 7714	CHAKRABORTY, ARPAN,LIN, YOU-DA,NAKAMURA, SHUJI,et al. LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES. US20100309943A1[P]. 2010-12-09.