Semiconductor laser device operated on single-axial mode

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	Semiconductor laser device operated on single-axial mode
其他题名	Semiconductor laser device operated on single-axial mode
	IWAMOTO KUNIAKI
	1986-08-09
专利权人	NEC CORP
公开日期	1986-08-09
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To contrive to improve the coupling efficiency to an optical system such as optical fibers by controlling the radiation angle of laser beams by a method wherein a curved surface is formed at a photo emission end surface at least on one side. CONSTITUTION:An uneven diffraction grating 12 having a regular period is formed on an N(or P)-InP substrate 11; and an N(or P)-InGaAsp photo guide layer 13, an InGaAsP active layer 14, and a P(or N)-InGaAsP clad layer 15 are successively formed above it; then, an active region 16 is put in a burial structure by surrounding its side surfaces with a P(or N)-InP layer 17 of large energy gap. Through burial crystal growth, an N(or P)-InP block layer 18, a P(or N)-InP layer 19, and P(or N)-InGaAsp contact layer 20 are further formed. A P(or N) electrode 21 and an N(or P) electrode 22 are provided on both surfaces top and bottom, respectively, so as to inject current. Here, both end surfaces for photo emission are provided with curved surfaces by a method such as chemical etching. This curved surface does not have to lie over the whole end surface, but it only has to lie close to the active region.
其他摘要	目的：通过一种方法来设法改善与光纤等光学系统的耦合效率，其中曲面至少在一侧形成在光发射端面上。组成：在N（或P）-InP基板11上形成具有规则周期的不均匀衍射光栅12;在其上依次形成N（或P）-InGaAsp光导层13，InGaAsP有源层14和P（或N）-InGaAsP包层15;然后，通过用具有大能隙的P（或N）-InP层17围绕其侧表面，将有源区16置于掩埋结构中。通过掩埋晶体生长，进一步形成N（或P）-InP阻挡层18，P（或N）-InP层19和P（或N）-InGaAsp接触层20。 P（或N）电极21和N（或P）电极22分别设置在顶部和底部的两个表面上，以便注入电流。这里，用于光发射的两个端面通过诸如化学蚀刻的方法设置有弯曲表面。该弯曲表面不必位于整个端面上，而是必须靠近有源区域。
主权项	-
申请日期	1985-02-01
专利号	JP1986177789A
专利状态	失效
申请号	JP1985018162
公开（公告）号	JP1986177789A
IPC 分类号	H01S5/00 \| H01S5/10 \| H01S5/12 \| H01S5/227 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64674
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	IWAMOTO KUNIAKI. Semiconductor laser device operated on single-axial mode. JP1986177789A[P]. 1986-08-09.

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