Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of compound semiconductor element | |
其他题名 | Manufacture of compound semiconductor element |
NISHIBE TORU; TAKAHASHI SHIGEKI | |
1991-07-25 | |
专利权人 | TOSHIBA CORP |
公开日期 | 1991-07-25 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To process it without the marginal part chipping thereby obtaining a compound semiconductor element of the same size as the substrate before the crystal growth by selectively removing the swelling part of the peripheral part of a compound semiconductor substrate by photoetching method. CONSTITUTION:A diffraction grating is made on an InP substrate 11 for distribution feedback type layer, and thereon an InGaAsP beam guide layer 12, an active layer 13, an InP clad layer 14, and an InGaAsP cap layer 15 are grown in order by organic metal vapor growth method. The peripheral part of the substrate was 5mum thick or more as compared with total 2.2mum thick in the center. The peripheral part is removed selectively in the order of the cap layer, the clad layer, the active layer, and the light guide layer, using a resist mask by surfuric etchant. The uniformity of the thickness becomes within + or -2% excepting 5mm from the peripheral part. And to form a mesa, it is covered with an insulating film 16, and to do photolithography, a resist film 17 is applied on this. |
其他摘要 | 用途:在没有边缘部分碎裂的情况下对其进行处理,从而通过光刻法选择性地去除化合物半导体衬底的周边部分的膨胀部分,从而获得与晶体生长之前的衬底尺寸相同的化合物半导体元件。组成:在用于分布反馈型层的InP衬底11上制作衍射光栅,在其上依次生长InGaAsP光束引导层12,有源层13,InP包层14和InGaAsP帽层15。金属气相生长法。基板的周边部分厚度为5μm或更厚,而中心的总厚度为2.2μm。使用通过表面蚀刻剂的抗蚀剂掩模,以覆盖层,包层,有源层和光导层的顺序选择性地去除外围部分。除了周边部分5mm外,厚度的均匀性在+或-2%之内。并且为了形成台面,用绝缘膜16覆盖,并且为了进行光刻,在其上施加抗蚀剂膜17。 |
主权项 | - |
申请日期 | 1989-11-30 |
专利号 | JP1991171729A |
专利状态 | 失效 |
申请号 | JP1989310973 |
公开(公告)号 | JP1991171729A |
IPC 分类号 | H01L21/306 | H01L21/205 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/64662 |
专题 | 半导体激光器专利数据库 |
作者单位 | TOSHIBA CORP |
推荐引用方式 GB/T 7714 | NISHIBE TORU,TAKAHASHI SHIGEKI. Manufacture of compound semiconductor element. JP1991171729A[P]. 1991-07-25. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1991171729A.PDF(207KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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