Molecular beam epitaxial growth

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	Molecular beam epitaxial growth
其他题名	Molecular beam epitaxial growth
	YAMAUCHI HIDEKI
	1986-08-25
专利权人	SANYO ELECTRIC CO LTD
公开日期	1986-08-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To form N-type and P-type GaAs regions simultaneously on the same surface of a substrate by making the strength ratio of Ga molecular beams and As molecular beams irradiated on the substrate partially different. CONSTITUTION:A GaAs substrate 11 is placed on a susceptor 1 and highly pure Ga, As and Ge are each contained in the first and the second Ga cells 2, 4, an As cell 5 and an impurity cell 6. Then, within an equipment is made a superhigh vacuum, the substrate 11, the impurity cell 6, the first and the second Ga cells 2, 4 and the As cell 5 are each heated to a required temperature and Ga and As molecular beams are irradiated. Under these conditions, if GaAs crystal is grown on the substrate 11, the first region 12 where the molecular beams are uniformly arrived and the second region 13 where the molecular beams from the first Ga cell 2 are not irradiated are formed. These regions 12, 13 are made P-type and N-type GaAs single crystal respectively.
其他摘要	用途：通过使Ga分子束和照射在基板上的As分子束的强度比部分地不同，在基板的同一表面上同时形成N型和P型GaAs区域。组成：GaAs基板11放置在基座1上，高纯度的Ga，As和Ge各自包含在第一和第二Ga单元2,4中，As单元5和杂质单元6.然后，在设备内当超高真空时，将基板11，杂质电池6，第一和第二Ga电池2,4和As电池5各自加热到所需温度，并照射Ga和As分子束。在这些条件下，如果在衬底11上生长GaAs晶体，则形成分子束均匀到达的第一区域12和未照射来自第一Ga单元2的分子束的第二区域13。这些区域12,13分别由P型和N型GaAs单晶制成。
主权项	-
申请日期	1985-02-20
专利号	JP1986191014A
专利状态	失效
申请号	JP1985031813
公开（公告）号	JP1986191014A
IPC 分类号	H01L21/203 \| H01S5/00 \| H01L21/26 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64626
专题	半导体激光器专利数据库
作者单位	SANYO ELECTRIC CO LTD
推荐引用方式 GB/T 7714	YAMAUCHI HIDEKI. Molecular beam epitaxial growth. JP1986191014A[P]. 1986-08-25.

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