Manufacture of quantum well semiconductor laser

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	Manufacture of quantum well semiconductor laser
其他题名	Manufacture of quantum well semiconductor laser
	FUJIMOTO AKIRA
	1986-11-18
专利权人	OMRON TATEISI ELECTRONICS CO
公开日期	1986-11-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To form an active region having two-dimensional quantum well structure, in which injected carriers are confined in one-dimensional space, by selectively etching an active region having thin-film multilayer quantum well structure, in which a quantum well layer and a barrier layer are shaped in a laminating manner, from the direction of a side surface. CONSTITUTION:An n-type GaAlAs confinement layer 2, thin-film multilayer quantum well structure 3A, in which GaAlAs barrier layers 3b and GaAs quantum well layers 3a are laminated alternately, and a p-type GaAlAs confinement layer 4 are formed onto an n-type GaAs substrate 1 in succession. The growth layers 2, 3A, 4 on the substrate 1 are processed to a mesa shape in width of W1, and dipped in a selective etching liquid through which the quantum well layers 3a consisting of GaAs are etched but the GaAlAs layers 3b are not etched, and only the well layers 3a are etched up to width of W2. n-type GaAlAs confinement layers 5 are grown on both side surfaces of a wafer having quantum well structure in which the GaAlAs barrier layers 3b are left in a pectinate manner. The barrier layer 3b sections are dissolved into a growth solution at that time. The n-type GaAlAs confinement layers 5 are shaped on both side surfaces of quantum well structure 3, and an electrode is formed.
其他摘要	目的：通过选择性地刻蚀具有薄膜多层量子阱结构的有源区，形成具有二维量子阱结构的有源区，其中注入的载流子被限制在一维空间中，其中量子阱层和阻挡层从侧表面的方向以层压方式成形。组成：n型GaAlAs限制层2，薄膜多层量子阱结构3A，其中GaAlAs阻挡层3b和GaAs量子阱层3a交替层叠，并且p型GaAlAs限制层4形成在n上连续型GaAs衬底1。将基板1上的生长层2,3A，4加工成宽度为W1的台面形状，并浸入选择性蚀刻液中，通过该蚀刻液蚀刻由GaAs构成的量子阱层3a，但不蚀刻GaAlAs层3b并且仅蚀刻阱层3a至W2的宽度。在具有量子阱结构的晶片的两个侧表面上生长n型GaAlAs限制层5，其中GaAlAs势垒层3b以梳状方式留下。此时，阻挡层3b部分溶解在生长溶液中。 n型GaAlAs限制层5在量子阱结构3的两个侧表面上成形，并形成电极。
主权项	-
申请日期	1985-05-15
专利号	JP1986260695A
专利状态	失效
申请号	JP1985101573
公开（公告）号	JP1986260695A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64550
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRONICS CO
推荐引用方式 GB/T 7714	FUJIMOTO AKIRA. Manufacture of quantum well semiconductor laser. JP1986260695A[P]. 1986-11-18.

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