Manufacture of distributed feedback semiconductor device

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	Manufacture of distributed feedback semiconductor device
其他题名	Manufacture of distributed feedback semiconductor device
	YAMAGUCHI MASAYUKI
	1990-09-18
专利权人	NEC CORP
公开日期	1990-09-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve reliability by causing a guide layer to grow by LPE(Liquid Phase Epitaxy) and an active layer to grow by MO-VPE(Metal Organic Vapor Phase Epitaxy). CONSTITUTION:A diffraction grating 5 with periods of 2400Angstrom is formed by luminous flux interference exposure of a laser 2 on an n-type InP substrate 1 and an n-type InGaAsP guide layer 2 with wavelengths of 15mum is formed to 0.1mum thickness by LPE. Further, an n-type InP buffer layer 6 having the thickness of 0.05mum, an MQW active layer 3, a p-type InP clad layer 4 having the thickness of 5mum, and a p-type InGaAsP cap layer 7 having the thickness of 0.5mum are formed one after another by MO-VPE. A multilayer semiconductor layer, with the exception of a stripe-like region which intersects at right angles to the grating 5, is etched in such a way that its etching is deeper than the depth of the layer 3 and then, a mesa-stripe 8 is formed. After that, a high resistance InP layer in which iron is doped by MO-VPE is formed so that the side face of the stripe 8 as well as the surface of the substrate 1 are covered and electrodes 9 and 10 are formed on both surfaces of the semiconductor. In this way, no dislocation takes place and a generated threshold current is low and superior reliability is obtained.
其他摘要	目的：通过LPE（液相外延）和MO-VPE（金属有机气相外延）生长活性层使引导层生长，从而提高可靠性。组成：一个周期为2400埃的衍射光栅5是由激光器2在n型InP衬底1上的光通量干涉曝光形成的，而一个波长为15μm的n型InGaAsP引导层2形成的厚度为0.1μm。 LPE。此外，厚度为0.05μm的n型InP缓冲层6，MQW有源层3，厚度为5μm的p型InP包层4和具有该厚度的p型InGaAsP盖层7通过MO-VPE一个接一个地形成0.5μm的量。除了与光栅5成直角相交的条状区域之外，多层半导体层被蚀刻，使得其蚀刻深于层3的深度，然后，台面条8形成了。之后，形成其中通过MO-VPE掺杂铁的高电阻InP层，使得条带8的侧面以及基板1的表面被覆盖，并且电极9和10形成在两个表面上。半导体。以这种方式，不发生位错并且产生的阈值电流低并且获得了优异的可靠性。
主权项	-
申请日期	1989-03-08
专利号	JP1990235386A
专利状态	失效
申请号	JP1989057107
公开（公告）号	JP1990235386A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64539
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YAMAGUCHI MASAYUKI. Manufacture of distributed feedback semiconductor device. JP1990235386A[P]. 1990-09-18.

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