Semiconductor laser comprising a plurality of optically active regions

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser comprising a plurality of optically active regions
其他题名	Semiconductor laser comprising a plurality of optically active regions
	MARSH, JOHN HAIG; KIM, SHIN-SUNG
	2004-06-24
专利权人	MARSH JOHN HAIG
公开日期	2004-06-24
授权国家	美国
专利类型	发明申请
摘要	There is disclosed an improved semiconductor laser device (10), and particularly, a broad area semiconductor laser with a singe-lobed far field pattern. Known broad area lasers are used for high power applications, but suffer from a number of problems such as filamentation, instabilities in the transverse mode, and poor far-field characteristics. The present invention addresses such by providing a semiconductor laser device (10) comprising: a plurality of optically active regions (240); each optically active region (240) including a Quantum Well (QW) structure (77); adjacent optically active regions (24) being spaced by an optically passive region; the/each optically passive region (245) being Quantum Well Intermixed (QW). The spacing between adjacent optically active regions (240) may conveniently be termed "segmentation".
其他摘要	公开了一种改进的半导体激光器件（10），特别是具有单瓣远场图案的宽区半导体激光器。已知的宽区域激光器用于高功率应用，但是存在许多问题，例如细丝化，横向模式的不稳定性和差的远场特性。本发明通过提供一种半导体激光器件（10）来解决这个问题，该半导体激光器件包括：多个光学有源区域（240）;每个光学活性区域（240）包括量子阱（QW）结构（77）;相邻的光学有源区（24）被光学无源区隔开; /每个光学无源区域（245）是量子阱混合（QW）。相邻光学活性区域（240）之间的间隔可以方便地称为“分割”。
主权项	A semiconductor laser device comprising: a plurality of optically active regions; each optically active region including a Quantum Well (QW) structure; adjacent optically active regions being spaced by an optically passive region; the/each optically passive region being Quantum Well Intermixed (QW).
申请日期	2002-02-15
专利号	US20040120377A1
专利状态	失效
申请号	US10/468173
公开（公告）号	US20040120377A1
IPC 分类号	H01S5/0625 \| H01S5/042 \| H01S5/068 \| H01S5/10 \| H01S5/12 \| H01S5/20 \| H01S5/34 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64498
专题	半导体激光器专利数据库
作者单位	MARSH JOHN HAIG
推荐引用方式 GB/T 7714	MARSH, JOHN HAIG,KIM, SHIN-SUNG. Semiconductor laser comprising a plurality of optically active regions. US20040120377A1[P]. 2004-06-24.