Tuneable laser

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	Tuneable laser
其他题名	Tuneable laser
	NICKOLAY, ZAKHLENIUK; ANTHONY, JAMES, HOLDEN
	2003-09-24
专利权人	BOOKHAM TECHNOLOGY PLC
公开日期	2003-09-24
授权国家	英国
专利类型	发明申请
摘要	A tuneable laser including a light creating section to generate light and a tuneable section formed of a semiconductor material which utilises the electro-optic effect to achieve a change in the refractive index of the material, W n, under the influence of an applied field, F, in accordance with the equation:; where n0 is the refractive index at zero field and W nL and W nQ are the linear and quadratic contributions to the change in refractive index respectively, r is the linear electro-optic coefficient of the material and s is the quadratic electro-optic coefficient of the material, the tuning section including a waveguide and the material of the waveguide incorporating a plurality of quantum dots and operating in a wavelength region where the value of rF is sufficiently greater than the value of sF<2>, so as to operate with the dominant effect on W n being contributed by the linear effect.; The bandgap wavelength, g g of the quantum dots ( g g may be less than 1400 nm) incorporated into the tuning section may be less than that of photons emitted by the light creating section (whose wavelengths range between g 1 and g 2), and the change in refractive index at g 1 and g 2 in operation may be substantially the same. The tuneable section may incorporate a DBR and the laser may include a phase change section that is also tuneable. The laser can be made from a III-V semiconductor material.
其他摘要	一种可调谐激光器，包括产生光的光产生部分和由半导体材料形成的可调部分，该半导体材料利用电光效应在施加的场的影响下实现材料的折射率W n的变化， F，按照等式：＆lt; HE = 9 WI = 62 LX = 345 LY = 654 TI = MF＆gt; ＆lt; PC＆gt;其中n0是零场的折射率，W nL和W nQ分别是对折射率变化的线性和二次贡献，r是材料的线性电光系数，s是二次电子 - 材料的光学系数，包括波导的调谐部分和包含多个量子点的波导的材料，并且在rF的值充分大于sF 2的值的波长区域中操作，因此通过线性效应对W n起主导作用。结合到调谐部分中的量子点的gg（gg可以小于1400nm）的带隙波长可以小于由光产生部分（其波长范围在g 1和g 2之间）发射的光子的波长，并且在操作中g 1和g 2处的折射率变化可以基本相同。可调部分可以包括DBR，并且激光器可以包括也可调谐的相变部分。激光器可以由III-V半导体材料制成。
主权项	A tunable laser including a light creating section to generate light and a tunable section formed of a semiconductor material which utilises the electro-optic effect to achieve a change in the refractive index of the material, An, under the influence of an applied field, F. in accordance with the equation: An = - 1/2 nO3 [rF + sF2] _ An, + AnQ 10 where nO is the refractive index at zero field and AnL and AnQ are the linear and quadratic contributions to the change in refractive index respectively, r is the linear electro-optic coefficient of the material and s is the quadratic electro-optic coefficient of the material, the material incorporating a plurality of quantum dots and operating in a wavelength region where the value of rF is sufficiently greater than the value of 5 sF2, so as to operate with the dominant effect on An being contributed by the linear effect.
申请日期	2002-03-27
专利号	GB2386753A
专利状态	失效
申请号	GB2002007164
公开（公告）号	GB2386753A
IPC 分类号	H01S5/34 \| H01S5/0625 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64468
专题	半导体激光器专利数据库
作者单位	BOOKHAM TECHNOLOGY PLC
推荐引用方式 GB/T 7714	NICKOLAY, ZAKHLENIUK,ANTHONY, JAMES, HOLDEN. Tuneable laser. GB2386753A[P]. 2003-09-24.

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