LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION

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	LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION
其他题名	LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION
	JOHNSON RALPH
	2006-07-06
专利权人	FINISAR CORPORATION
公开日期	2006-07-06
授权国家	世界知识产权组织
专利类型	发明申请
摘要	A laser system having migration enhanced epitaxy grown substantially flat layers proximate to quantum wells of an active region. The flat layers may be grown at low temperature. This growth may result in flatter interfaces in the nitrogen containing quantum wells within the active region as well as lower trap densities in adjacent material. This may achieve a reduced trap density as well as reduced segregation resulting in a spectral luminescence profile revealing a single narrow peak with a high level of photoluminescence.
其他摘要	具有迁移增强外延的激光系统在有源区的量子阱附近生长基本上平坦的层。平坦层可以在低温下生长。这种生长可以导致有源区内含氮量子阱中的界面更平坦以及相邻材料中的陷阱密度更低。这可以实现降低的陷阱密度以及减少的偏析，导致光谱发光分布显示具有高水平光致发光的单个窄峰。
主权项	A method for making an active region of a laser, comprising: forming a first layer having a substantially flat surface, at least partially with migration enhanced epitaxy; and forming a quantum well on the substantially flat surface of the first layer.
申请日期	2005-08-31
专利号	WO2006026610A3
专利状态	未确认
申请号	PCT/US2005/030819
公开（公告）号	WO2006026610A3
IPC 分类号	H01S5/00 \| H01L21/203 \| H01S5/32 \| H01S5/343 \| H01S5/183 \| H01S5/34 \| H01S5/323 \| H01L33/00
专利代理人	ISRAELSEN, BURNS, R.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64446
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	JOHNSON RALPH. LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION. WO2006026610A3[P]. 2006-07-06.

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