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Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling
Chen, Lei; Ma, Zhongshui; Cao, J. C.; Zhang, T. Y.; Zhang, Chao
作者部门瞬态光学国家重点实验室
2007-09-03
发表期刊APPLIED PHYSICS LETTERS
ISSN0003-6951
卷号91期号:10页码:102115
产权排序3
摘要The authors demonstrate that the Rashba spin-orbit interaction in low-dimensional semiconductors can enhance or reduce the electron-phonon scattering rate by as much as 25%. The underlying mechanism is that the electron-phonon scattering phase space for the upper (lower) Rashba band is significantly enhanced (suppressed) by the spin-orbit interaction. While the scattering time decreases for the upper level, the mobility of the level increases due to an additional term in the electron velocity. (C) 2007 American Institute of Physics.
文章类型Article
学科领域数理科学和化学
WOS标题词Science & Technology ; Physical Sciences
DOI10.1063/1.2783203
收录类别SCI ; EI
关键词[WOS]INXGA1-XAS/INP QUANTUM-WELLS ; HETEROINTERFACE ; FIELD
语种英语
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000249322900036
引用统计
被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/6438
专题瞬态光学研究室
作者单位1.Peking Univ, Sch Phys, Beijing 100871, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
3.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710068, Peoples R China
4.Univ Wollongong, Sch Engn Phys, Wollongong, NSW 2522, Australia
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Chen, Lei,Ma, Zhongshui,Cao, J. C.,et al. Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling[J]. APPLIED PHYSICS LETTERS,2007,91(10):102115.
APA Chen, Lei,Ma, Zhongshui,Cao, J. C.,Zhang, T. Y.,&Zhang, Chao.(2007).Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling.APPLIED PHYSICS LETTERS,91(10),102115.
MLA Chen, Lei,et al."Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling".APPLIED PHYSICS LETTERS 91.10(2007):102115.
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