Very short light pulse generating equipment

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	Very short light pulse generating equipment
其他题名	Very short light pulse generating equipment
	ODANI JIYUN; YANAI TETSUO
	1991-04-11
专利权人	松下電器産業株式会社
公开日期	1991-04-11
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To realize the large output of very short light pulse with short wavelength by a method wherein a semiconductor laser is constituted of a gain region and a saturable absorption region, a very short light pulse with a large peak output is obtained, light pulse output of laser is made to enter, as the fundamental wave, into a wavelength transducer of an optical waveguide type, and the second harmonic wave proportional to square of the fundamental wave output is obtained. CONSTITUTION:A very short light pulse generating equipment of wavelength converting type is constituted of the following; a GaAlAs/GaAs based semiconductor laser 9 of oscillation wavelength of 0.83mum, a GaAlAs active layer 10, a gain region 11 having a length of 230mum, saturable absorption regions 12, 13 having a length of 25mum, a current injecting electrode 14, a wavelength transducer 2, an optical waveguide 3, lenses 4, 5, and a lambda/2 plate 6. The resonator end-surface 20 of the laser 9 is formed of a multilayer coating of Al2O3 and Si, and the reflection factor is high: 96%. The end-surface 21 is formed of a single layer of Al2O3, and the reflection factor is low and 3%. In the transducer 2, the optical waveguide 3 is formed on a Z-cut LiNbO3 substrate by proton exchange. The fundamental wave is the lowest order TM waveguide mode, and the higher harmonics are the Cherenkov radiation type of the TM radiation mode.
其他摘要	目的：通过半导体激光器由增益区和可饱和吸收区构成的方法实现短波长的短光脉冲的大输出，获得具有大峰值输出的非常短的光脉冲，光脉冲输出使激光器作为基波进入光波导型波长转换器，并获得与基波输出的平方成比例的二次谐波。组成：一个非常短的波长转换型光脉冲发生设备由以下构成;振荡波长为0.83μm的GaAlAs / GaAs基半导体激光器9，GaAlAs有源层10，长度为230μm的增益区11，长度为25μm的可饱和吸收区12,13，电流注入电极14，a波长换能器2，光波导3，透镜4,5和λ/ 2板6.激光器9的谐振器端面20由Al2O3和Si的多层涂层形成，并且反射系数高： 96％。端面21由单层Al 2 O 3形成，并且反射系数低且为3％。在换能器2中，光波导3通过质子交换形成在Z切LiNbO3衬底上。基波是最低阶TM波导模式，高次谐波是TM辐射模式的Cherenkov辐射类型。
主权项	-
申请日期	1990-05-25
专利号	JP1991087085A
专利状态	失效
申请号	JP1990135949
公开（公告）号	JP1991087085A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/096 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64350
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	ODANI JIYUN,YANAI TETSUO. Very short light pulse generating equipment. JP1991087085A[P]. 1991-04-11.

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