Mode-locked semiconductor lasers with quantum-confined active region

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	Mode-locked semiconductor lasers with quantum-confined active region
其他题名	Mode-locked semiconductor lasers with quantum-confined active region
	GRAY, ALLEN L.; HUANG, HUA; LI, HUA; VARANGIS, PETROS M.; ZHANG, LEI; ZILKO, JOHN L.
	2006-10-05
专利权人	INNOLUME ACQUISITION, INC.
公开日期	2006-10-05
授权国家	美国
专利类型	发明申请
摘要	A mode-locked integrated semiconductor laser has a gain section and an absorption section that are based on quantum-confined active regions. The optical mode(s) in each section can be modeled as occupying a certain cross-sectional area, referred to as the mode cross-section. The mode cross-section in the absorber section is larger in area than the mode cross-section in the gain section, thus reducing the optical power density in the absorber section relative to the gain section. This, in turn, delays saturation of the absorber section until higher optical powers, thus increasing the peak power output of the laser.
其他摘要	锁模集成半导体激光器具有基于量子限制有源区的增益部分和吸收部分。每个部分中的光学模式可以被建模为占据某个横截面积，称为模式横截面。吸收器部分中的模式横截面的面积大于增益部分中的模式横截面，因此降低了吸收器部分中相对于增益部分的光功率密度。这反过来又延迟了吸收器部分的饱和直到更高的光功率，从而增加了激光器的峰值功率输出。
主权项	An integrated mode-locked semiconductor laser for producing laser pulses comprising: a horizontal laser cavity integrated on a semiconductor substrate, the laser cavity having an optical path; a quantum-confined active region located along the optical path; a gain section including a first portion of the quantum-confined active region; an absorber section including a second portion of the quantum-confined active region, wherein a mode cross-section of the absorber section has a larger area than a mode cross-section of the gain section, and the gain section and/or the absorber section produce a loss modulation applied to laser pulses propagating around the laser cavity.
申请日期	2005-12-13
专利号	US20060222024A1
专利状态	失效
申请号	US11/302724
公开（公告）号	US20060222024A1
IPC 分类号	H01S3/098 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64339
专题	半导体激光器专利数据库
作者单位	INNOLUME ACQUISITION, INC.
推荐引用方式 GB/T 7714	GRAY, ALLEN L.,HUANG, HUA,LI, HUA,et al. Mode-locked semiconductor lasers with quantum-confined active region. US20060222024A1[P]. 2006-10-05.