Xi'an Institute of Optics and Precision Mechanics,CAS
Low voltage defect super high efficiency diode sources | |
其他题名 | Low voltage defect super high efficiency diode sources |
KHALFIN, VIKTOR BORISOVITCH; ABELES, JOSEPH H.; KWAKERNAAK, MARTIN; WHALEY, RALPH DOUD JR.; AN, HAIYAN | |
2005-07-14 | |
专利权人 | SARNOFF CORPORATION |
公开日期 | 2005-07-14 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | A high efficiency, low voltage defect laser, and a method of forming a high efficiency laser. The low voltage defect laser includes at least one p-clad layer, at least one n-clad layer, and at least one waveguide of at least a plurality of quantum wells. The at least one waveguide is sandwiched at least between the p-clad layer and the n-clad layer, and at least one permeable crystal layer may be embedded in the p-clad layer and immediately adjacent to the at least one waveguide. The method includes growing an AlGaAs layer atop a GaAs layer, etching of the AlGaAs into submicron structure, oxidizing the AlGaAs, SAG undoped growing of an SAG undoped GaAs atop the GaAs layer, and regrowing, with p++ doped GaAs, of a planar-buried p++ GaAs. |
其他摘要 | 高效率,低电压缺陷激光器,以及形成高效激光器的方法。低压缺陷激光器包括至少一个p-包层,至少一个n-包层,以及至少多个量子阱的至少一个波导。至少一个波导至少夹在p覆层和n覆层之间,并且至少一个可渗透晶体层可以嵌入p覆层中并紧邻至少一个波导。该方法包括在GaAs层顶上生长AlGaAs层,将AlGaAs蚀刻成亚微米结构,氧化AlGaAs,在GaAs层顶上未掺杂SAG未掺杂GaAs的SAG,以及用p ++掺杂GaAs重新生长平面掩埋p ++ GaAs。 |
主权项 | A laser system, comprising: at least one p-clad layer; at least one n-clad layer; at least one waveguide comprising at least a plurality of quantum wells, wherein said at least one waveguide is sandwiched between said p-clad layer and said n-clad layer, and said plurality of quantum wells is offset toward said p-clad layer with respect to said n-clad layer. |
申请日期 | 2004-08-20 |
专利号 | US20050152424A1 |
专利状态 | 失效 |
申请号 | US10/922795 |
公开(公告)号 | US20050152424A1 |
IPC 分类号 | B32B5/18 | H01S3/03 | H01S5/00 | H01S5/042 | H01S5/10 | H01S5/20 | H01S5/22 | H01S5/223 | H01S5/32 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/64238 |
专题 | 半导体激光器专利数据库 |
作者单位 | SARNOFF CORPORATION |
推荐引用方式 GB/T 7714 | KHALFIN, VIKTOR BORISOVITCH,ABELES, JOSEPH H.,KWAKERNAAK, MARTIN,et al. Low voltage defect super high efficiency diode sources. US20050152424A1[P]. 2005-07-14. |
条目包含的文件 | 条目无相关文件。 |
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