Low voltage defect super high efficiency diode sources

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	Low voltage defect super high efficiency diode sources
其他题名	Low voltage defect super high efficiency diode sources
	KHALFIN, VIKTOR BORISOVITCH; ABELES, JOSEPH H.; KWAKERNAAK, MARTIN; WHALEY, RALPH DOUD JR.; AN, HAIYAN
	2005-07-14
专利权人	SARNOFF CORPORATION
公开日期	2005-07-14
授权国家	美国
专利类型	发明申请
摘要	A high efficiency, low voltage defect laser, and a method of forming a high efficiency laser. The low voltage defect laser includes at least one p-clad layer, at least one n-clad layer, and at least one waveguide of at least a plurality of quantum wells. The at least one waveguide is sandwiched at least between the p-clad layer and the n-clad layer, and at least one permeable crystal layer may be embedded in the p-clad layer and immediately adjacent to the at least one waveguide. The method includes growing an AlGaAs layer atop a GaAs layer, etching of the AlGaAs into submicron structure, oxidizing the AlGaAs, SAG undoped growing of an SAG undoped GaAs atop the GaAs layer, and regrowing, with p++ doped GaAs, of a planar-buried p++ GaAs.
其他摘要	高效率，低电压缺陷激光器，以及形成高效激光器的方法。低压缺陷激光器包括至少一个p-包层，至少一个n-包层，以及至少多个量子阱的至少一个波导。至少一个波导至少夹在p覆层和n覆层之间，并且至少一个可渗透晶体层可以嵌入p覆层中并紧邻至少一个波导。该方法包括在GaAs层顶上生长AlGaAs层，将AlGaAs蚀刻成亚微米结构，氧化AlGaAs，在GaAs层顶上未掺杂SAG未掺杂GaAs的SAG，以及用p ++掺杂GaAs重新生长平面掩埋p ++ GaAs。
主权项	A laser system, comprising: at least one p-clad layer; at least one n-clad layer; at least one waveguide comprising at least a plurality of quantum wells, wherein said at least one waveguide is sandwiched between said p-clad layer and said n-clad layer, and said plurality of quantum wells is offset toward said p-clad layer with respect to said n-clad layer.
申请日期	2004-08-20
专利号	US20050152424A1
专利状态	失效
申请号	US10/922795
公开（公告）号	US20050152424A1
IPC 分类号	B32B5/18 \| H01S3/03 \| H01S5/00 \| H01S5/042 \| H01S5/10 \| H01S5/20 \| H01S5/22 \| H01S5/223 \| H01S5/32
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64238
专题	半导体激光器专利数据库
作者单位	SARNOFF CORPORATION
推荐引用方式 GB/T 7714	KHALFIN, VIKTOR BORISOVITCH,ABELES, JOSEPH H.,KWAKERNAAK, MARTIN,et al. Low voltage defect super high efficiency diode sources. US20050152424A1[P]. 2005-07-14.