Heat treatment for compound semiconductor wafer

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	Heat treatment for compound semiconductor wafer
其他题名	Heat treatment for compound semiconductor wafer
	WATANABE HISATSUNE; HAYASHI ITSUO
	1982-09-08
专利权人	NIPPON DENKI KK
公开日期	1982-09-08
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve the quality of a compound semiconductor crystal which is contaminated by a heavy metal by covering III-V group semiconductor compound wafer with a thermal decomposition controlling protection film in a condition having a misfit transposition based on grating constant difference. CONSTITUTION:As an example, a three-dimensional mixed crystal of Ga Aso9Po is formed at 2mu by a vapor growth processing on the surface of GaAs epitaxial wafer for infrared ray luminous diode use and a misfit transposition is introduced. The surface of the GaAso9Po layer is covered with Si3N4 film of 0.1mu and a heat treatment is provided for the surface at 850 deg.C for 5hr in an argon atmosphere. The light emitting effect due to the heat treatment as described above can be improved remarkably and the quality of the compound semiconductor crystal contaminated also be improved remarkably.
其他摘要	用途：通过在具有基于光栅常数差的失配转置的条件下用热分解控制保护膜覆盖III-V族半导体化合物晶片来改善被重金属污染的化合物半导体晶体的质量。组成：作为一个例子，在用于红外线发光二极管的GaAs外延晶片表面上通过气相生长处理在2μM形成Ga Aso9Po的三维混晶，并引入失配转置。 GaAso9Po层的表面覆盖有0.1μm的Si3N4膜，并在氩气氛中在850℃下对表面进行5小时的热处理。如上所述的热处理引起的发光效果可以显着改善，并且污染的化合物半导体晶体的质量也可以显着提高。
主权项	-
申请日期	1981-03-03
专利号	JP1982145311A
专利状态	失效
申请号	JP1981030323
公开（公告）号	JP1982145311A
IPC 分类号	H01L21/205 \| H01L21/322 \| H01L21/324 \| H01L33/30 \| H01S5/00 \| H01L21/20 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64179
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	WATANABE HISATSUNE,HAYASHI ITSUO. Heat treatment for compound semiconductor wafer. JP1982145311A[P]. 1982-09-08.