High-power infrared semiconductor diode light emitting device

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	High-power infrared semiconductor diode light emitting device
其他题名	High-power infrared semiconductor diode light emitting device
	BEAN, DAVID M.; QIAN, YI; PULVER, DANIEL E.
	2007-01-04
专利权人	SEMINEX CORPORATION
公开日期	2007-01-04
授权国家	美国
专利类型	发明申请
摘要	A semiconductor laser diode using the aluminum gallium, arsenide, gallium indium arsenide phosphide, indium phosphide, (AlGaInAs/GaInAsP/InP) material system and related combinations is disclosed. Both the design of the active layer and the design of the optical cavity are optimized to minimize the temperature rise of the active region and to minimize the effects of elevated active layer temperature on the laser efficiency. The result is a high output power semiconductor laser for the wavelengths between 30 and 61 micrometers for the pumping of erbium doped waveguide devices or for direct use in military, medical, or commercial applications.
其他摘要	公开了一种使用铝镓，砷化物，磷化镓铟铟，磷化铟，（AlGaInAs / GaInAsP / InP）材料系统和相关组合的半导体激光二极管。有源层的设计和光学腔的设计都被优化，以最小化有源区的温度上升并使有源层温度升高对激光器效率的影响最小化。结果是用于波长在30和61微米之间的高输出功率半导体激光器，用于泵浦掺铒波导器件或直接用于军事，医疗或商业应用。
主权项	A semiconductor light emitting device, comprising: an indium phosphide substrate; an aluminum gallium indium arsenide active layer on the indium phosphide substrate; and indium phosphide cladding layers on either side of the active layer; and wherein a doping concentration of the cladding layers is less than 5×1017 cm−3.
申请日期	2005-09-22
专利号	US20070002915A1
专利状态	授权
申请号	US11/233494
公开（公告）号	US20070002915A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64177
专题	半导体激光器专利数据库
作者单位	SEMINEX CORPORATION
推荐引用方式 GB/T 7714	BEAN, DAVID M.,QIAN, YI,PULVER, DANIEL E.. High-power infrared semiconductor diode light emitting device. US20070002915A1[P]. 2007-01-04.