Tapered air apertures for thermally robust vertical cavity laser structures

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	Tapered air apertures for thermally robust vertical cavity laser structures
其他题名	Tapered air apertures for thermally robust vertical cavity laser structures
	COLDREN, LARRY A.; NAONE, RYAN L.
	2002-06-06
专利权人	NATIONAL SCIENCE FOUNDATION
公开日期	2002-06-06
授权国家	美国
专利类型	发明申请
摘要	A process for forming a Vertical Cavity Laser (VCL) structure that includes using an intermixing technique involving an high temperature annealing operation to overcome lateral carrier diffusion away from the center of the active region of the VCL. Degrading effects of the high temperature annealing are avoided by first restricting the dopant associated with the p-type Bragg reflector (DBR) region of the VCL to low diffusivity types such as carbon, thus eliminating a thermally-induced diffusion that occurs when other p-type dopants such as beryllium (Be), Zinc (Zn), or Magnesium (Mg) are employed. Further, the oxide created to act as an aperture in a conventional VCL structure is removed leaving behind an air gap having the shape of the oxide aperture. It was found that the degrading effects associated with annealing the VCL structure were minimized using carbon as the p-type dopant and air gap apertures. In addition, it was determined that the annealed, air gap apertured, VCL provided the same optical loss properties previously attributed only to an un-annealed, oxide-apertured, VCL-but without sacrificing efficiency due to lateral carrier diffusion.
其他摘要	一种形成垂直腔激光器（VCL）结构的工艺，包括使用包括高温退火操作的混合技术，以克服远离VCL有源区中心的横向载流子扩散。通过首先将与VCL的p型布拉格反射器（DBR）区域相关的掺杂剂限制为低扩散性类型（例如碳）来避免高温退火的降级效应，从而消除了当其他p-时发生的热致扩散。使用诸如铍（Be），锌（Zn）或镁（Mg）的掺杂剂。此外，去除了用作传统VCL结构中的孔的氧化物，留下了具有氧化物孔径形状的气隙。已经发现，使用碳作为p型掺杂剂和气隙孔径，使与VCL结构退火相关的降解效应最小化。此外，确定退火的气隙开孔VCL提供了相同的光学损耗特性，此前仅归因于未退火的氧化物开孔的VCL，但是由于横向载流子扩散而没有牺牲效率。
主权项	A process of forming a vertical cavity laser including an oxidation region, a first distributed Bragg reflector (DBR) region overlying the oxidation region which is doped with a p-type dopant, and a second DBR region underlying the oxidation region which is doped with an n-type dopant, said process comprising the actions of: forming the first DBR region using a p-type dopant exhibiting a low diffusivity; forming an air aperture in the oxidation region; and performing an intermixing procedure which includes a high temperature annealing operation.
申请日期	2000-12-01
专利号	US20020067748A1
专利状态	失效
申请号	US09/728931
公开（公告）号	US20020067748A1
IPC 分类号	H01S5/183 \| H01S5/20 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64158
专题	半导体激光器专利数据库
作者单位	NATIONAL SCIENCE FOUNDATION
推荐引用方式 GB/T 7714	COLDREN, LARRY A.,NAONE, RYAN L.. Tapered air apertures for thermally robust vertical cavity laser structures. US20020067748A1[P]. 2002-06-06.