Manufacture of buried type semiconductor laser

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	Manufacture of buried type semiconductor laser
其他题名	Manufacture of buried type semiconductor laser
	FURUYAMA HIDETO; UEMATSU YUTAKA; YAMAMOTO MOTOYUKI
	1983-09-29
专利权人	TOKYO SHIBAURA DENKI KK
公开日期	1983-09-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To provide by a normal crystal growing method a relatively readily thin active region by employing two adjacent blade-shaped mesas instead of the provision of the groove on a semiconductor substrate. CONSTITUTION:The growth is accelerated at the mesa side surface (111) and the growing solution is absorbed to the side surface in the mesa (100) surface having narrow width, and the growing speed of the (100) surface of 0 or negative. When the mesa having narrow width is disposed adjacently, a crystal is not, if the crystal is grown to the top of the mesa, grown. Further, the crystal growing speed between two blade-shaped mesas is later than the case of the buried mesa groove. This is because the growing speed of the other outside of the (111) or (-111) exposed between the two blade-shaped mesas is fast, and the solute in the growing solution is dispersed to stop the fast growing speed between the two mesas. A bias layer or a high resistance layer 6 is formed in the region disposed between the mesas, thereby narrowing the current. According to this structure, a thin InGaAsP active layer 3 is formed with good controllability on the InP substrate 1, thereby obtaining a preferable buried type laser device.
其他摘要	目的：通过采用两个相邻的叶片状台面而不是在半导体衬底上设置凹槽，通过常规晶体生长方法提供相对容易薄的有源区域。组成：在台面侧表面（111）处生长加速，并且生长的溶液被吸收到具有窄宽度的台面（100）表面的侧表面，并且（100）表面的生长速度为0或负。当具有窄宽度的台面相邻设置时，如果晶体生长到台面的顶部，则晶体不会生长。此外，两个叶片状台面之间的晶体生长速度晚于埋入式台面槽的情况。这是因为在两个叶片状台面之间暴露的（111）或（-111）之外的另一个的生长速度很快，并且生长溶液中的溶质被分散以阻止两个台面之间的快速生长速度。。在设置在台面之间的区域中形成偏置层或高电阻层6，从而使电流变窄。根据该结构，在InP衬底1上形成具有良好可控性的薄InGaAsP有源层3，从而获得优选的掩埋型激光器件。
主权项	-
申请日期	1982-03-25
专利号	JP1983164284A
专利状态	失效
申请号	JP1982046246
公开（公告）号	JP1983164284A
IPC 分类号	H01S5/00 \| H01S5/223 \| H01S5/24 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63989
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA DENKI KK
推荐引用方式 GB/T 7714	FURUYAMA HIDETO,UEMATSU YUTAKA,YAMAMOTO MOTOYUKI. Manufacture of buried type semiconductor laser. JP1983164284A[P]. 1983-09-29.

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