Multi-beam semiconductor laser device and manufacture thereof

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	Multi-beam semiconductor laser device and manufacture thereof
其他题名	Multi-beam semiconductor laser device and manufacture thereof
	KARAKIDA SHOICHI; SHIMA AKIHIRO
	1990-09-25
专利权人	三菱電機株式会社
公开日期	1990-09-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To establish easily an angle (thetart. angle) spreading in the vertical direction of a laser beam so that its spread of the angle is superior in controllability and reproducibility by making the sum of thicknesses of clad layers which are provided on both sides of the first active layer smaller than that of the clad layers which are provided on both sides of the second active layer. CONSTITUTION:A p-type Ga0.86Al0.15As active layer 5c having a uniform thickness, a thick n-type Ga0.25Al0.48As the second clad layer 6a, and a thin n-type Ga0.52Al0.52As the second clad layer 6b are provided. The sum of thicknesses of clad layers 6b and 4 that are provided on both sides of the first active layer 5c is allowed to become smaller than that of thicknesses of clad layers 6a and 4 that are provided on both sides of the second active layer 5c. This approach makes a plurality of lasers in an element hold each angle (thetart. angle) spreading in the vertical direction of each different laser beam.
其他摘要	目的：建立一个在激光束垂直方向上扩展的角度（角度）角度，使其角度的扩展在可控性和再现性方面优越，通过使两侧提供的包层厚度之和。第一有源层小于设置在第二有源层两侧的包层的第一有源层。组成：一个厚度均匀的p型Ga0.86Al0.15As有源层5c，厚的n型Ga0.25Al0.48作为第二个包层6a，和一个薄的n型Ga0.52Al0.52As作为第二个包层提供了图6b。设置在第一有源层5c两侧的包层6b和4的厚度之和允许变得小于设置在第二有源层5c两侧的包层6a和4的厚度之和。该方法使得元件中的多个激光器保持每个角度（角度）在每个不同激光束的垂直方向上扩展。
主权项	-
申请日期	1989-03-14
专利号	JP1990240992A
专利状态	失效
申请号	JP1989063078
公开（公告）号	JP1990240992A
IPC 分类号	H01S3/23 \| H01S3/06 \| H01S5/00 \| H01S5/40 \| H01S3/18 \| H01S3/25
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63892
专题	半导体激光器专利数据库
作者单位	三菱電機株式会社
推荐引用方式 GB/T 7714	KARAKIDA SHOICHI,SHIMA AKIHIRO. Multi-beam semiconductor laser device and manufacture thereof. JP1990240992A[P]. 1990-09-25.

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