Vertical cavity surface-emitting laser and method of fabricating the same

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	Vertical cavity surface-emitting laser and method of fabricating the same
其他题名	Vertical cavity surface-emitting laser and method of fabricating the same
	KIM, IN ; LEE, EUN-HWA ; KIM, SUNG-WON
	2008-06-26
专利权人	SAMSUNG ELECTRONICS CO. ; LTD.
公开日期	2008-06-26
授权国家	美国
专利类型	发明申请
摘要	A vertical cavity surface-emitting laser (VCSEL) and a method of fabricating the same with easier alignment of a light output side aperture and an oxide aperture, The VCSEL includes: lower and upper reflection layers laminated with each other and forming a longitudinal resonance section there between; an active layer for producing a laser beam, an electrode formed in a ring shape on the upper reflection layer so the electrode has an aperture through which the laser beam is projected; a contact layer formed on the upper reflection layer; a ¼ wavelength layer formed on the contact layer such that a high transmittance area with the highest transmittance for the laser beam is formed within the aperture of the electrode; and a dielectric layer covering the contact layer and the ¼ wavelength layer, except for the electrode formed part.
其他摘要	一种垂直腔面发射激光器（VCSEL）及其制造方法，其更容易对准光输出侧孔径和氧化物孔径，VCSEL包括：下反射层和上反射层彼此层叠并形成纵向谐振部分在那之间;用于产生激光束的有源层，在上反射层上形成环形的电极，因此电极具有孔，激光束通过该孔投射;形成在上反射层上的接触层;在接触层上形成1/4波长层，使得在电极的孔内形成具有最高激光束透射率的高透射率区域;除了电极形成部分之外，覆盖接触层和1/4波长层的介电层。
主权项	A vertical cavity surface-emitting laser comprising: an upper reflection layer and a lower reflection layer laminated with each other and forming a longitudinal resonance section there between; an active layer for producing a laser beam, the active layer being positioned between the upper reflection layer and a lower reflection layer; a contact layer formed on the upper reflection layer; an electrode formed in a ring shape on the contact layer, wherein said electrode having an aperture in the center of the ring shape in which the laser beam transmitted through the upper reflection layer is projected; a ¼ wavelength layer formed on the contact layer such that a high transmittance area of an upper portion of the longitudinal resonance section with the highest transmittance for the laser beam is formed in a ring shape within the aperture of the electrode; and a dielectric layer covering the contact layer and the ¼ wavelength layer, except for the electrode formed part.
申请日期	2007-12-18
专利号	US20080151961A1
专利状态	失效
申请号	US11/958410
公开（公告）号	US20080151961A1
IPC 分类号	H01S3/083
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63845
专题	半导体激光器专利数据库
作者单位	1.SAMSUNG ELECTRONICS CO. 2.LTD.
推荐引用方式 GB/T 7714	KIM, IN,LEE, EUN-HWA,KIM, SUNG-WON. Vertical cavity surface-emitting laser and method of fabricating the same. US20080151961A1[P]. 2008-06-26.