Xi'an Institute of Optics and Precision Mechanics,CAS
Optical devices with electron-beam evaporated multilayer mirror | |
其他题名 | Optical devices with electron-beam evaporated multilayer mirror |
DENNIS GLENN DEPPE; NILOY KUMAR DUTTA; ERDMANN FREDERICK SCHUBERT; LI-WEI TU; GEORGE JOHN ZYDZIK | |
1996-08-01 | |
专利权人 | AT&T CORP. |
公开日期 | 1996-08-01 |
授权国家 | 中国香港 |
专利类型 | 发明申请 |
摘要 | This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror (10) comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borositicate glass (BSG) CaF₂, MgF₂ and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF₂. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF₂ mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility. |
其他摘要 | 本发明包括一种垂直腔面发射激光器,其具有包括至少一对四分之一波长层的顶部镜子(10),每对四分之一波长层由低折射率层和高折射率层组成,高折射率层是选自GaP和ZnS的半导体和低折射率层选自硼硅酸盐玻璃(BSG)CaF 2,MgF 2和NaF。在垂直腔表面发射激光器中特别有用的是由多对GaP / BSG或ZnS / CdF 2叠层形成的反射镜。这种镜子具有激光器有效操作所需的高反射率特性。GaP / BSG或ZnS / CaF 2镜面结构相对于VCSEL的先前设计在最终反射率,低损耗和后生长处理兼容性方面表现出相当大的改进。 |
主权项 | An optical device comprising a semiconductor material selected from the group consisting of III-V and II-VI semiconductors, comprising a lasing cavity and top and bottom metal electrodes (17,19) for applying electric field to the lasing cavity, said lasing cavity comprises a bottom mirror (12), a bottom confining region (15), an active region (14), a top confining region (15) and a top mirror (18), said top mirror comprising a plurality of pairs of quarterwave layers, each pair of layers consisting of a low index layer and a high index layer arranged in an alternating sequence, CHARACTERISED IN THAT said high index layer is a semiconductor selected from the group consisting of GaP and ZnS, and said low index layer is of a material chosen from the group of materials selected from borosilicate glass (BSG), CaF₂, MgF₂ and NaF. |
申请日期 | 1996-06-29 |
专利号 | HK0961460A |
专利状态 | 失效 |
申请号 | HK96001228 |
公开(公告)号 | HK0961460A |
IPC 分类号 | H01S5/00 | H01S5/028 | H01S5/183 | C23C | H01L | H01S | H01S3/085 | C23C14/00 | H01L33/00 | H01S3/025 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/63413 |
专题 | 半导体激光器专利数据库 |
作者单位 | AT&T CORP. |
推荐引用方式 GB/T 7714 | DENNIS GLENN DEPPE,NILOY KUMAR DUTTA,ERDMANN FREDERICK SCHUBERT,et al. Optical devices with electron-beam evaporated multilayer mirror. HK0961460A[P]. 1996-08-01. |
条目包含的文件 | 条目无相关文件。 |
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