Optical devices with electron-beam evaporated multilayer mirror

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	Optical devices with electron-beam evaporated multilayer mirror
其他题名	Optical devices with electron-beam evaporated multilayer mirror
	DENNIS GLENN DEPPE; NILOY KUMAR DUTTA; ERDMANN FREDERICK SCHUBERT; LI-WEI TU; GEORGE JOHN ZYDZIK
	1996-08-01
专利权人	AT&T CORP.
公开日期	1996-08-01
授权国家	中国香港
专利类型	发明申请
摘要	This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror (10) comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borositicate glass (BSG) CaF₂, MgF₂ and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF₂. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF₂ mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.
其他摘要	本发明包括一种垂直腔面发射激光器，其具有包括至少一对四分之一波长层的顶部镜子（10），每对四分之一波长层由低折射率层和高折射率层组成，高折射率层是选自GaP和ZnS的半导体和低折射率层选自硼硅酸盐玻璃（BSG）CaF 2，MgF 2和NaF。在垂直腔表面发射激光器中特别有用的是由多对GaP / BSG或ZnS / CdF 2叠层形成的反射镜。这种镜子具有激光器有效操作所需的高反射率特性。GaP / BSG或ZnS / CaF 2镜面结构相对于VCSEL的先前设计在最终反射率，低损耗和后生长处理兼容性方面表现出相当大的改进。
主权项	An optical device comprising a semiconductor material selected from the group consisting of III-V and II-VI semiconductors, comprising a lasing cavity and top and bottom metal electrodes (17,19) for applying electric field to the lasing cavity, said lasing cavity comprises a bottom mirror (12), a bottom confining region (15), an active region (14), a top confining region (15) and a top mirror (18), said top mirror comprising a plurality of pairs of quarterwave layers, each pair of layers consisting of a low index layer and a high index layer arranged in an alternating sequence, CHARACTERISED IN THAT said high index layer is a semiconductor selected from the group consisting of GaP and ZnS, and said low index layer is of a material chosen from the group of materials selected from borosilicate glass (BSG), CaF₂, MgF₂ and NaF.
申请日期	1996-06-29
专利号	HK0961460A
专利状态	失效
申请号	HK96001228
公开（公告）号	HK0961460A
IPC 分类号	H01S5/00 \| H01S5/028 \| H01S5/183 \| C23C \| H01L \| H01S \| H01S3/085 \| C23C14/00 \| H01L33/00 \| H01S3/025
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63413
专题	半导体激光器专利数据库
作者单位	AT&T CORP.
推荐引用方式 GB/T 7714	DENNIS GLENN DEPPE,NILOY KUMAR DUTTA,ERDMANN FREDERICK SCHUBERT,et al. Optical devices with electron-beam evaporated multilayer mirror. HK0961460A[P]. 1996-08-01.