Geometric optimizations for reducing spontaneous emissions in photodiodes

OPT OpenIR > 半导体激光器专利数据库

	Geometric optimizations for reducing spontaneous emissions in photodiodes
其他题名	Geometric optimizations for reducing spontaneous emissions in photodiodes
	GUENTER, JAMES K.; TATUM, JIMMY A.; BIARD, JAMES R.
	2005-12-29
专利权人	FINISAR CORPORATION
公开日期	2005-12-29
授权国家	美国
专利类型	发明申请
摘要	An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
其他摘要	一种光学结构，可降低激光器有源区自发发射的影响。光学结构包括优化以减少自发发射的影响。光学结构包括具有顶部和底部DBR镜的VCSEL和连接到镜子的有源区。光学结构还包括连接到VCSEL的光电二极管。可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角，使用光学孔径，改变一个或多个反射镜的反射率，改变光电二极管以更加不受自发发射的影响，并使用离子注入来降低光致发光效率。
主权项	An optical structure comprising: a VCSEL, the VCSEL comprising: a top DBR mirror; an active region coupled to the top DBR mirror; and a bottom DBR mirror coupled to the active region; a photodiode coupled to the VCSEL; and wherein the VCSEL includes a mesa structure, the mesa structure formed to include irregularities on walls of the mesa structure.
申请日期	2004-12-30
专利号	US20050286586A1
专利状态	授权
申请号	US11/027383
公开（公告）号	US20050286586A1
IPC 分类号	H01S5/00 \| H01S5/026 \| H01S5/183
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63385
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	GUENTER, JAMES K.,TATUM, JIMMY A.,BIARD, JAMES R.. Geometric optimizations for reducing spontaneous emissions in photodiodes. US20050286586A1[P]. 2005-12-29.