Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (vcsels)

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	Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (vcsels)
其他题名	Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (vcsels)
	JI, CHEN; SU, CHUNG-YI
	2009-12-31
专利权人	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
公开日期	2009-12-31
授权国家	美国
专利类型	发明申请
摘要	A semiconductor device is provided that includes an optical feedback structure that is monolithically integrated with a VCSEL device and which extends the speed of the VCSEL device beyond the speed to which it would otherwise be limited due to relaxation oscillation. The optical feedback structure does not rely on light emissions from the VCSEL substrate material to produce optical feedback. Consequently, extension of the bandwidth of the semiconductor device through the use of optical feedback is not limited by the absorption threshold wavelength of the substrate material. Furthermore, because the optical feedback structure does not include the substrate, the ability to use optical feedback to extend the bandwidth of the device is independent of the precision with which the substrate thickness can be controlled.
其他摘要	提供了一种半导体器件，其包括光学反馈结构，该光学反馈结构与VCSEL器件单片集成，并且VCSEL器件的速度超过了由于弛豫振荡而限制的速度。光学反馈结构不依赖于来自VCSEL衬底材料的光发射来产生光学反馈。因此，通过使用光学反馈来扩展半导体器件的带宽不受衬底材料的吸收阈值波长的限制。此外，因为光学反馈结构不包括基板，所以使用光学反馈来扩展器件的带宽的能力与可以控制基板厚度的精度无关。
主权项	A semiconductor device comprising: a vertical cavity surface emitting laser (VCSEL) device comprising at least a first distributed Bragg reflector (DBR), a second DBR, a multi-quantum well (MQW) and current confinement region, and a substrate, the MQW and current confinement region being between the first and second DBRs and providing an active cavity in the semiconductor device in which electrons are converted into photons to produce light, at least some of the light produced in the active cavity being emitted as laser light from the semiconductor device, the laser light emitted from the semiconductor device having a maximum modulation bandwidth; and an optical feedback structure comprising at least a third DBR and an optical spacer, the optical spacer being between the first DBR and the third DBR, the optical spacer providing a passive cavity in the semiconductor device, and wherein at least some of the light that is produced in the active cavity passes through the first DBR into the optical spacer of the optical feedback structure, the optical feedback structure providing optical feedback to the VCSEL device that results in an increase in the maximum modulation bandwidth of the light emitted from the semiconductor device, wherein the optical feedback structure is between the substrate and the VCSEL device such that the first DBR is adjacent the optical spacer and the third DBR is adjacent the substrate, and wherein at least a portion of the light that passes through the first DBR into the optical spacer is encountered by the third DBR, the third DBR reflecting substantially all of the light encountered thereby, and wherein the laser light emitted from the semiconductor device is light that passes through the second DBR moving in a direction away from the active channel.
申请日期	2008-06-30
专利号	US20090323751A1
专利状态	授权
申请号	US12/164923
公开（公告）号	US20090323751A1
IPC 分类号	H01S5/183 \| H01S5/026
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63364
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式 GB/T 7714	JI, CHEN,SU, CHUNG-YI. Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (vcsels). US20090323751A1[P]. 2009-12-31.