Vcsel

OPT OpenIR > 半导体激光器专利数据库

	Vcsel
其他题名	Vcsel
	VICTORIA, BROADLEY; JENNIFER, MARY, BARNES
	2005-04-27
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2005-04-27
授权国家	英国
专利类型	发明申请
摘要	A first wet chemical etch process using a sulphuric acid/hydrogen peroxide/ water solution is used to etch a GaAs capping layer 5 and an AlGaAs cladding layer 4, an AlGaInP active layer acts as an etch stopping layer to control the etch depth. A second wet chemical etch process using an ammonia/hydrogen peroxide/water solution is used to selectively etch the sidewall of the GaAs capping layer. The two-stage etching process allows the width of the capping layer to be controlled to be the same as or less than the underlying cladding layer, and where the vertical angle r 2 of the capping layer is less than the vertical angle r 1 of the cladding layer. VCSELs with continuous sidewalls between the cladding and capping layers can thereby be manufactured.
其他摘要	使用硫酸/过氧化氢/水溶液的第一湿化学蚀刻工艺用于蚀刻GaAs覆盖层5和AlGaAs包覆层4，AlGaInP有源层用作蚀刻停止层以控制蚀刻深度。使用氨/过氧化氢/水溶液的第二湿化学蚀刻工艺用于选择性地蚀刻GaAs覆盖层的侧壁。两阶段蚀刻工艺允许将覆盖层的宽度控制为与下面的包覆层相同或者更小，并且其中覆盖层的垂直角度r 2小于覆盖层的垂直角度r 1。包层。由此可以制造在包层和覆盖层之间具有连续侧壁的VCSEL。
主权项	A method of etching a semiconductor layer structure composing a first semiconductor region and a second semiconductor region disposed over the first semiconductor region, the method comprising: a first etching step ol etching the structure using a first etch.ant thereby to etch the lost semiconductor region to a desired side wall profile; and a second etching step o, etching the structure using a second etchant different from the first etchant thereby to etch the second semiconductor region to a desired side wall profile while not substantially affecting the side wall profile of the first semiconductorregion; wherem the second etching step produces a second semiconductor region that has a side wall profile that is substantially continuous with the side wall profile of the first semiconductor region or that has, at the interface between the first semiconductor region and the second semiconductor region, a width smaller than the width of the first sernconductor region.
申请日期	2003-10-24
专利号	GB2407434A
专利状态	失效
申请号	GB2003024940
公开（公告）号	GB2407434A
IPC 分类号	H01S5/00 \| H01S5/183 \| H01S5/20
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63329
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	VICTORIA, BROADLEY,JENNIFER, MARY, BARNES. Vcsel. GB2407434A[P]. 2005-04-27.

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