Integrated optical element

OPT OpenIR > 半导体激光器专利数据库

	Integrated optical element
其他题名	Integrated optical element
	YAZAWA YOSHIAKI; SATO YOSHIO; SATO MANABU; TANNO KIYOHIKO; TSUBOI NOBUYOSHI; MINEMURA TETSUO; ASANO JUNKO
	1990-08-03
专利权人	HITACHI LTD
公开日期	1990-08-03
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a technology through which light emitting or photodetecting components are disposed quite densely in an element where a plurality of light emitting or photodetecting components are integrated on the same substrate by providing the second conductivity type impurity regions of the light emitting or photodetecting components each having a diode structure so that the above impurity regions are independent of each other and they are able to establish respective potential gradients individually. CONSTITUTION:A plurality of the second conductivity type impurity regions 3 are formed on a semi-insulating or the first conductivity type substrate 4 and a plurality of light emitting components 1 having a diode structure consisting of the second conductivity type semiconductor connecting to the second conductivity type impurity regions 3 and the first conductivity type semiconductor which is adjacent to the above second conductivity type semiconductor are integrated in an element. In this element, the foregoing second conductivity type impurity regions 3 are provided so that the regions are independent of each other and they are able to establish respective potential gradients individually. For example, the light emitting components 1 which are disposed in an array form are divided into two separate groups for each component and anodes in each group are connected one another for each p type diffusion layer 3 which is formed at a lower part of each light emitting component Then electrodes which provide electric potential from the outside for the above anodes respectively are shown at A and B. Cathodes of the light emitting components which are adjacent to the anodes are connected to one bonding pad 2 by making every two cathodes form a set.
其他摘要	目的：通过提供发光或光电检测组件的第二导电类型杂质区域，获得一种技术，通过该技术将发光或光电检测组件非常密集地放置在多个发光或光电检测组件集成在同一基板上的元件中每个都具有二极管结构，使得上述杂质区域彼此独立，并且它们能够单独地建立相应的电位梯度。组成：多个第二导电类型杂质区3形成在半绝缘或第一导电类型基板4和多个发光元件1上，二极管结构由连接到第二导电层的第二导电类型半导体组成类型杂质区3和与上述第二导电类型半导体相邻的第一导电类型半导体集成在一个元件中。在该元件中，提供前述第二导电类型杂质区3，使得这些区域彼此独立，并且它们能够单独地建立相应的电位梯度。例如，以阵列形式布置的发光部件1针对每个部件被分成两个单独的组，并且每个组中的阳极彼此连接用于形成在下部的每个p +型扩散层3。然后，在A和B处示出了分别从外部为上述阳极提供电势的电极。与阳极相邻的发光元件的阴极通过使每个阳极连接到一个焊盘2上。两个阴极形成一组。
主权项	-
申请日期	1989-01-26
专利号	JP1990196465A
专利状态	失效
申请号	JP1989014966
公开（公告）号	JP1990196465A
IPC 分类号	H01L27/15 \| H01S5/00 \| H01S5/026 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63200
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	YAZAWA YOSHIAKI,SATO YOSHIO,SATO MANABU,et al. Integrated optical element. JP1990196465A[P]. 1990-08-03.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1990196465A.PDF（607KB）	专利		开放获取	CC BY-NC-SA	请求全文