Semiconductor laser assembly with built-in electronic cooling element

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	Semiconductor laser assembly with built-in electronic cooling element
其他题名	Semiconductor laser assembly with built-in electronic cooling element
	GOTO MASAMI
	1990-08-03
专利权人	FUJITSU LTD
公开日期	1990-08-03
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable the high speed drive of a semiconductor laser keeping the reduction minimum in temperature difference between two faces of an element by a method wherein a high electric conductor where an LD chip is mounted is directly fixed to a metal case. CONSTITUTION:An LD chip 21 is mounted on end fixed to a stem 31 formed of a material which is high in electric conductivity and low in thermal conductivity. The stem 31 is extended to be directly connected and fixed to the inner face of a metal case 27. A high frequency board 32, on which an electric signal transmitting pattern is formed, is pasted on the stem 3 And, the stem 31 is mounted on a Peltier element 23, where the element 23 is composed of a semiconductor element possessed of the Peltier effect sandwiched between ceramic boards 24 and 25. then a current and a voltage applied to the electrodes of the element 23 are controlled, thermal energy is transferred in one direction through the element 23 to enable the element 21 to be cooled down to an appropriate temperature.
其他摘要	目的：通过一种方法，使半导体激光器的高速驱动保持元件两个面之间的温度差最小化，其中安装LD芯片的高导电体直接固定在金属外壳上。组成：LD芯片21安装在一端固定到杆31，杆31由导电率高且导热率低的材料制成。杆31延伸直接连接并固定到金属壳27的内表面。在杆31上粘贴高频板32，在其上形成电信号传输图案。并且，杆31是安装在帕尔贴元件23上，其中元件23由具有夹在陶瓷板24和25之间的珀耳帖效应的半导体元件构成，然后控制施加到元件23的电极的电流和电压，热能是通过元件23在一个方向上转移，以使元件21冷却到适当的温度。
主权项	-
申请日期	1989-01-26
专利号	JP1990197185A
专利状态	失效
申请号	JP1989015012
公开（公告）号	JP1990197185A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63198
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	GOTO MASAMI. Semiconductor laser assembly with built-in electronic cooling element. JP1990197185A[P]. 1990-08-03.

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