Stem for semiconductor device

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	Stem for semiconductor device
其他题名	Stem for semiconductor device
	KOGURE NAOSHI
	1990-07-20
专利权人	NEC CORP
公开日期	1990-07-20
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To increase the electrostatic breakdown strength of a stem by a method wherein a pad for metal wire bonding use is constituted of a double layer consisting of an iron layer, which is the surface of the pad, and a copper layer, which is the lower part of the pad. CONSTITUTION:A copper post 3 is soldered on a stem base 1 made of iron, a heat sink 4, which is made of high-resistance Si and has each conductor layer 9a and 9b on its upper and lower surfaces, is soldered thereon and a semiconductor laser pellet 5 is fixed on this layer 9a. Moreover, an iron layer 7 is provided on part of the surface of the post 3 and a bonding is performed by a gold bonding wire 6b from this layer 7 to a lead 2. Moreover, a bonding is performed by a gold bonding wire 6a from the pellet 5 to the layer 7. As a result, the heat of the pellet 5 passes through the Si heat sink and the copper post and is efficiently dissipated outside of the stem base. In such a way, by covering part of the stem with a metal layer having a large hardness, a wire bonding is facilitated without disturbing the heat dissipation of the pellet and the electrostatic breakdown strength of the stem can be increased.
其他摘要	用途：通过一种方法来增加杆的静电击穿强度，其中用于金属线接合的垫由双层构成，该双层由作为垫的表面的铁层和铜层构成，该铜层是铜层。垫的下半部分。组成：铜柱3焊接在由铁制成的杆座1上，散热器4由高阻Si制成，并在其上下表面上焊接有每个导体层9a和9b，并焊接在其上半导体激光芯块5固定在该层9a上。此外，在柱3的表面的一部分上设置铁层7，并且通过金键合线6b从该层7到引线2进行接合。此外，通过金接合线6a进行接合。颗粒5到达层7.结果，颗粒5的热量通过Si散热器和铜柱，并有效地散发到杆底部之外。以这种方式，通过用具有大硬度的金属层覆盖杆的一部分，在不干扰丸粒的散热的情况下便于引线键合，并且可以增加杆的静电击穿强度。
主权项	-
申请日期	1989-01-12
专利号	JP1990186648A
专利状态	失效
申请号	JP1989006123
公开（公告）号	JP1990186648A
IPC 分类号	H01L23/34 \| H01L21/60 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63197
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KOGURE NAOSHI. Stem for semiconductor device. JP1990186648A[P]. 1990-07-20.

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