Semiconductor laser apparatus and method of driving same

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	Semiconductor laser apparatus and method of driving same
其他题名	Semiconductor laser apparatus and method of driving same
	ISHIKAWA MAKOTO; KATAYAMA RYUICHI; YUASA TSUNAO
	1989-10-06
专利权人	NEC CORP
公开日期	1989-10-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To realize a high-output and low-noise characteristic which is optimum as a light source of an addition-record and rewrite type optical disk or the like even without using a high-frequency superposed circuit by a method wherein a switch used to connect a second conductivity type electrode layer in an absorption region to a first conductivity type semiconductor substrate is installed and an excitation region is coupled optically to the absorption region. CONSTITUTION:While an absorption region 11 and an excitation region 12 are kept optically coupled by means of an electrode-separating groove 13, a semiconductor laminate structure is separated electrically into the absorption region 11 and the excitation region 12; a switch 14 which connects a second conductivity type electrode layer in the absorption region to a first conductivity type semiconductor substrate directly or via a resistance in accordance with a control signal supplied from the outside is installed. When the changeover switch 14 is connected to B, the absorption region 11 is grounded and this absorption region 11 functions as an oversaturation absorber; accordingly, a self-oscillation is generated and a low-noise characteristic can be obtained. On the other hand, when the changeover switch 14 is connected to A, a carrier is injected also to the absorption region 11 in the same manner as in the excitation region 12, and a high-output characteristic can be obtained. Accordingly, when the switch 14 is changed over in synchronization with a changeover operation between a drive voltage V2 at a high output and a drive voltage V1 at a low output, a low-noise oscillation and a high-output oscillation can be obtained alternately.
其他摘要	用途：为了实现高输出和低噪声特性，即使不使用高频叠加电路，也可以作为加法记录和重写型光盘等的光源的最佳特性，其中开关用于将吸收区域中的第二导电类型电极层连接到第一导电类型半导体衬底，并且激发区域光学耦合到吸收区域。组成：吸收区域11和激发区域12通过电极分离槽13光学耦合，半导体叠层结构电气分离到吸收区域11和激发区域12;开关14将吸收区域中的第二导电类型电极层连接到第一导电类型根据从外部提供的控制信号，直接或通过电阻安装半导体衬底。当转换开关14连接到B时，吸收区域11接地，并且该吸收区域11用作过饱和吸收器;因此，产生自振荡并且可以获得低噪声特性。另一方面，当转换开关14连接到A时，载体也以与激励区域12中相同的方式注入吸收区域11，并且可以获得高输出特性。因此，当开关14与高输出的驱动电压V2和低输出的驱动电压V1之间的转换操作同步地切换时，可以获得低噪声振荡和高输出振荡。交替。
主权项	-
申请日期	1988-03-31
专利号	JP1989251775A
专利状态	失效
申请号	JP1988079627
公开（公告）号	JP1989251775A
IPC 分类号	G11B7/125 \| H01S5/00 \| H01S5/026 \| H01S5/042 \| H01S5/06 \| H01S5/065 \| H01S5/068 \| H01S3/133 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63150
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ISHIKAWA MAKOTO,KATAYAMA RYUICHI,YUASA TSUNAO. Semiconductor laser apparatus and method of driving same. JP1989251775A[P]. 1989-10-06.

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