Xi'an Institute of Optics and Precision Mechanics,CAS
Optical device for characteristic inspection of photosemiconductor element | |
其他题名 | Optical device for characteristic inspection of photosemiconductor element |
TADA TOSHIO | |
1988-02-04 | |
专利权人 | NEC CORP |
公开日期 | 1988-02-04 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To eliminate the need to adjust the optical axis to a laser diode and to improve the efficiency of inspecting operation and the accuracy of measurement by combining and uniting a large-diameter handle fiber, a long-focus lens, and a short-focus lens. CONSTITUTION:The laser diode 1 as an object of inspection is fitted nearby the incidence port 2a of the large-diameter handle fiber 2 and light is emitted by an external power source, made incident on the incidence part 2a, and projected from a projection port 2b on the other end surface. A collimator lens 3 with long focus (f1) is provided behind the handle fiber 2 to make the incident light parallel. The spherical lens 4 with extremely short focus (f2) is provided behind the lens 3 and the incident light is made incident on a small-diameter photodetector 5 through this lens and converted here into an electric signal, which is sent to a characteristic inspecting device. Those handle fiber 2, lens 3, lens 4, and photodetector 5 are coupled in one body while their optical axes are aligned with one another. |
其他摘要 | 用途:通过组合和组合大直径手柄光纤,长焦镜头和短焦点,无需调整光轴到激光二极管,提高检查操作效率和测量精度镜片。组成:作为检查对象的激光二极管1安装在大直径手柄光纤2的入射端口2a附近,并且光由外部电源发射,入射到入射部分2a,并从投影端口投射2b在另一个端面上。具有长焦距(f1)的准直透镜3设置在手柄光纤2的后面,以使入射光平行。具有极短焦距(f2)的球面透镜4设置在透镜3的后面,并且入射光通过该透镜入射到小直径光电探测器5上并在此转换成电信号,该电信号被发送到特征检查装置。 。这些处理光纤2,透镜3,透镜4和光电探测器5在一个主体中耦合,同时它们的光轴彼此对准。 |
主权项 | - |
申请日期 | 1986-07-18 |
专利号 | JP1988026545A |
专利状态 | 失效 |
申请号 | JP1986170205 |
公开(公告)号 | JP1988026545A |
IPC 分类号 | H01L21/66 | G01J1/00 | G01M11/00 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/63035 |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | TADA TOSHIO. Optical device for characteristic inspection of photosemiconductor element. JP1988026545A[P]. 1988-02-04. |
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