Semiconductor laser beam generating equipment

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	Semiconductor laser beam generating equipment
其他题名	Semiconductor laser beam generating equipment
	KITAJIMA HIROSHI; YOSHIDA TOMIYOSHI; MORISHITA KOJI; NAKATSUKA NOBUO
	1987-05-28
专利权人	OMRON TATEISI ELECTRONICS CO
公开日期	1987-05-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the deviation between a laser beam and a mirror cylinder, and make it possible to adjust precisely an optical axis deviation, by supporting a light source part and a mirror cylinder part by the same supporting part made of invar, surrounding the supporting part of a semiconductor laser of light source with heat-insulating material, and holding the light source part from outside by a screw. CONSTITUTION:A semiconductor element 11 is adjusted in its temperature by a Peltier element 14 via a supporting part 12 made of copper. The supporting part 12 is surrounded with heat- insulating material, and its temperature adjusting efficiency is excellent. The radiation side of the Peltier element 14 is coupled with a radiation fin 18 via an element-fixing plate 15 of copper and thermal conduction parts 16 and 17, and its temperature adjusting efficiency is excellent. Accordingly, the spread beam from the laser element 11 is transmitted toward mirror cylinders 21 and 23 with a desired diameter and direction. As to beam shaping, the mirror cylinder 21 is rotated against a supporting part 19, and shifted in the direction of optical axis to realize a desired beam B. The light source parts 11-14 and the mirror surface parts 21-25 are held by a supporting part 19 of invar, and the mirror cylinders 21 and 23 are also made of invar. A light source part is kept in a constant temperature, so that the deviation caused by temperature does not occure between the laser element and the mirror cylinder. Optical axis deviation is adjusted by the screw 20 of the supporting part 19.
其他摘要	用途：为了防止激光束和镜筒之间的偏差，并通过由因瓦尔制成的相同支撑部件支撑光源部件和镜筒部件，可以精确地调整光轴偏差，围绕支撑件具有隔热材料的光源半导体激光器的一部分，并通过螺钉从外部保持光源部分。组成：半导体元件11的温度由珀耳帖元件14通过铜制的支撑部件12调节。支撑部12由绝热材料包围，其温度调节效率优异。珀耳帖元件14的辐射侧通过铜和导热部分16和17的元件固定板15与散热片18耦合，并且其温度调节效率极好。因此，来自激光元件11的扩散光束以所需的直径和方向朝向镜筒21和23传输。关于光束整形，镜筒21相对于支撑部分19旋转，并沿光轴方向移动，以实现所需的光束B.光源部分11-14和镜面部分21-25由因瓦尔的支撑部分19，镜筒21和23也由因瓦尔制成。光源部件保持恒定温度，从而在激光元件和镜筒之间不会发生由温度引起的偏差。通过支撑部分19的螺钉20调节光轴偏差。
主权项	-
申请日期	1985-11-18
专利号	JP1987117382A
专利状态	失效
申请号	JP1985257967
公开（公告）号	JP1987117382A
IPC 分类号	H01S5/00 \| H01S5/06 \| H01S3/103 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63005
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRONICS CO
推荐引用方式 GB/T 7714	KITAJIMA HIROSHI,YOSHIDA TOMIYOSHI,MORISHITA KOJI,et al. Semiconductor laser beam generating equipment. JP1987117382A[P]. 1987-05-28.

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