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Semiconductor laser device and its driving method
其他题名Semiconductor laser device and its driving method
MATSUEDA HIDEAKI
1987-05-08
专利权人HITACHI LTD
公开日期1987-05-08
授权国家日本
专利类型发明申请
摘要PURPOSE:To form a semiconductor laser device having an operation speed higher than several Gbit/s, by forming a plurality of excitation region arranged in the state where mutual optical coupling can occur and driven independently, with a main emission region and the other auxiliary emission region for modulation. CONSTITUTION:A large driving current is applied to an excitation region (A region) to induce an intense emission. The driving current nearly equal to the threshold value is applied to the other neighboring excitation region (B region) to induce an weak emission, and the super mode is formed. When this state of the driving current is inverted, the emission intensity also is inverted, and the high intensity emission region transfers to the B region. The transition speed is as high as about 10sec. That is, the emission output of A region decreases rapidly, although the carrier density of A region does not decrease rapidly when the current flowing in the A region is decreased rapidly. By making use of this, the semiconductor laser device capable of high speed modulation such as 1,000Gbit/s can be obtained.
其他摘要目的:通过形成多个激发区域来形成具有高于几Gbit / s的操作速度的半导体激光器件,所述多个激发区域布置在可以发生相互光耦合并且独立驱动的状态下,具有主发射区域和另一个辅助发射调制区域。组成:一个大的驱动电流施加到激发区域(A区域),以引起强烈的发射。将几乎等于阈值的驱动电流施加到另一个相邻激发区域(B区域)以引起弱发射,并形成超模式。当驱动电流的这种状态反转时,发射强度也反转,并且高强度发射区域转移到B区域。转变速度高达约10-12秒。也就是说,A区域的发射输出迅速减小,尽管当A区域中流动的电流快速减小时A区域的载流子密度不会迅速降低。通过利用它,可以获得能够进行诸如1,000Gbit / s的高速调制的半导体激光器件。
主权项-
申请日期1985-10-25
专利号JP1987098685A
专利状态失效
申请号JP1985237279
公开(公告)号JP1987098685A
IPC 分类号H01S5/00 | H01S5/042 | H01S5/06 | H01S3/103 | H01S3/18
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/63003
专题半导体激光器专利数据库
作者单位HITACHI LTD
推荐引用方式
GB/T 7714
MATSUEDA HIDEAKI. Semiconductor laser device and its driving method. JP1987098685A[P]. 1987-05-08.
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