Submounting device for semiconductor laser

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	Submounting device for semiconductor laser
其他题名	Submounting device for semiconductor laser
	OOTSUKA NAOTAKA
	1984-09-29
专利权人	SHARP KK
公开日期	1984-09-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable to conduct the Joule heat generated at a P-N junction to a heat sink member and at the same time to improve the heat dissipating effect caused by a micro uneven surface by a method wherein silicon is used as a submounting member, and many micro unevennesses are formed on the exposed surface around the junction of said member with a semiconductor laser element. CONSTITUTION:A semiconductor laser element 2 is brazed to a submounting member 6 with a solder 3, and a heat sink member 4 is brazed to said member 6 with a solder 5. Many micro unnevennesses 7 are formed around the junction of said member 6 with said element. As the heat sink member 4, a metal excellent in thermal conductivity such as Cu and Ag is used, and Si is used as the submounting member 6. E.g. In, Sn, and In-Sn alloy is used for the solders 5 and 6.
其他摘要	用途：能够将PN结产生的焦耳热传导到散热器构件，同时通过硅用作子安装构件的方法改善微小不平坦表面引起的散热效果，并且在所述构件与半导体激光元件的连接处周围的暴露表面上形成微小不均匀性。组成：半导体激光元件2用焊料3钎焊到子安装件6上，散热器件4用焊料5钎焊到所述件6上。在所述件6的连接处周围形成许多微小缺陷7。说元素。作为散热构件4，使用诸如Cu和Ag的导热性优异的金属，并且使用Si作为子安装构件6。 In，Sn和In-Sn合金用于焊料5和6。
主权项	-
申请日期	1983-03-22
专利号	JP1984172786A
专利状态	失效
申请号	JP1983047610
公开（公告）号	JP1984172786A
IPC 分类号	H01L23/14 \| H01L21/52 \| H01S5/00 \| H01S5/024 \| H01L21/58 \| H01L23/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62878
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	OOTSUKA NAOTAKA. Submounting device for semiconductor laser. JP1984172786A[P]. 1984-09-29.

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