Controlling method for light of semiconductor laser

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	Controlling method for light of semiconductor laser
其他题名	Controlling method for light of semiconductor laser
	KAWAGUCHI HITOSHI
	1983-08-18
专利权人	NIPPON TELEGRAPH & TELEPHONE
公开日期	1983-08-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable to control the light output intensity of a semiconductor laser at a high speed by optically coupling the laser light having a polarized wave plane different at 90 deg. form the polarized surface of the oscillation light of the laser and wavelength within the gain wavelength range of the laser to an active layer forming the laser. CONSTITUTION:A DC power source 11 which supplies a current for exciting a semiconductor laser is provided at the laser 10 of double hetero structure having an active layer 12, and a TE polarized wave having an electric field component is oscillated while in parallel with the hetero junction boundary. In this structure, the light of polarized wave different at 90 deg. from the wavelength within gain wavelength of the laser is optically coupled to the laser 10 from the direction of the resonator to guide the light in the layer 12. In this manner, if the incident light becomes a value larger than the prescribed value, the oscillation of TE wave can be stopped, and the oscillation of TM wave can be started. Accordingly, full excitation carrier in the laser 10 can be all contributed to the switching, thereby enabling to efficiently control the light.
其他摘要	目的：通过光学耦合具有不同于90度的偏振波面的激光，能够高速控制半导体激光器的光输出强度。形成激光器的振荡光的偏振表面和激光器的增益波长范围内的波长到形成激光器的有源层。组成：在具有有源层12的双异质结构的激光器10上提供提供激励半导体激光器的电流的DC电源11，并且具有电场分量的TE极化波在与异质体并联的同时振荡。结界。在这种结构中，偏振波的光在90度不同。从激光器的增益波长内的波长，从谐振器的方向光学耦合到激光器10，以引导层12中的光。以这种方式，如果入射光变为大于规定值的值，则振荡可以停止TE波的振荡，并且可以开始TM波的振荡。因此，激光器10中的全激励载体可以全部有助于切换，从而能够有效地控制光。
主权项	-
申请日期	1982-02-15
专利号	JP1983139485A
专利状态	失效
申请号	JP1982022479
公开（公告）号	JP1983139485A
IPC 分类号	H01S5/00 \| H01S5/06 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62848
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGRAPH & TELEPHONE
推荐引用方式 GB/T 7714	KAWAGUCHI HITOSHI. Controlling method for light of semiconductor laser. JP1983139485A[P]. 1983-08-18.

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