Xi'an Institute of Optics and Precision Mechanics,CAS
High output semiconductor laser element | |
其他题名 | High output semiconductor laser element |
NOGUCHI ETSUO; NAKANO YOSHINORI; SUZUKI YOSHIO; TAKAHEI KENICHIROU; NAGAI HARUO | |
1983-05-21 | |
专利权人 | NIPPON DENSHIN DENWA KOSHA |
公开日期 | 1983-05-21 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a preferable high output semiconductor laser element which can prevent current leakage by increasing the growing thickness of a p type crystalline layer for narrowing a current larger than the same degree as the diffusing distance of free electrons implanted to the layer. CONSTITUTION:Layers 11, 12, 13 are sequentially formed as crystalline layers on a substrate crystalline layer 16, a stripe thin film of suitable width is formed, both sides except the lower part of the thin film are removed by chemical etching, and crystalline layers of buried layers 14, 15 to become current narrowing p-n junction are sequentially formed. At this time to prevent current leakage through the buried layer, the thickness of a P type InP crystalline layer 14 is grown in the same degree or larger than the diffusing distance of free electrons, is controlled in thickness to cover the lateral side of GaInAsP 4-element mixed crystal 12, thereby forming an ohmic electrodes 17, 18 and coupling signal oscillator 19. |
其他摘要 | 目的:为了获得一种优选的高输出半导体激光元件,它可以通过增加p型晶体层的生长厚度来防止电流泄漏,从而使电流变窄,其电流大于与注入层中的自由电子的扩散距离相同的程度。组成:层11,12,13顺序形成为基板结晶层16上的结晶层,形成适当宽度的条形薄膜,除了薄膜下部以外的两侧通过化学蚀刻去除,并且结晶层依次形成掩埋层14,15,以成为电流变窄的pn结。此时为了防止漏电流通过掩埋层,P型InP晶体层14的厚度以与自由电子的扩散距离相同或更大的程度生长,控制厚度以覆盖GaInAsP4的侧面。 - 元素混合晶体12,从而形成欧姆电极17,18和耦合信号振荡器19。 |
主权项 | - |
申请日期 | 1981-11-17 |
专利号 | JP1983085587A |
专利状态 | 失效 |
申请号 | JP1981184200 |
公开(公告)号 | JP1983085587A |
IPC 分类号 | H01S5/00 | H01S5/227 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/62838 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENSHIN DENWA KOSHA |
推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,NAKANO YOSHINORI,SUZUKI YOSHIO,et al. High output semiconductor laser element. JP1983085587A[P]. 1983-05-21. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1983085587A.PDF(150KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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