Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser-photodetector beam integrate element | |
其他题名 | Semiconductor laser-photodetector beam integrate element |
KITAMURA MITSUHIRO; KOBAYASHI ISAO; SUGIMOTO SHIGETOKI | |
1983-05-20 | |
专利权人 | NIPPON DENKI KK |
公开日期 | 1983-05-20 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To remove the reinjection of reflected light from the light receiving surface of a photodetector to a semiconductor laser, and to eliminate the reflecting noises of the photodetector by making a distance between the light receiving surface and a laser resonator surface opposite to the light receiving surface the shortest in the uicinity of a laser resonant axis. CONSTITUTION:One resonator surface 105 of the hetero-structure semiconductor laser (BH-LD) 101 is formed through an etching method, and the photodetector (PD) 102 is arranged as a photodetector monitoring laser beams 110 from the surface while being opposed to the surface 105. Here, the light receiving surface 106 of the PD takes convex shape toward the so-called BH-LD 101 so that the distance between the light receiving surface and the laser resonator surface is made the shortest near the laser resonant axis. Accordingly, the combination of BH-LD and PD results in the extremely small generation of reflecting noises. The efficiency of light reception is improved as compared to the light receiving surface of a plane because the convex light receiving surface 106 of the PD 102 focuses laser beams 110 and couples them with the PD 102 by its lens action. |
其他摘要 | 目的:消除从光电探测器的光接收表面到半导体激光器的反射光的再注入,并通过使光接收表面和与光接收器相对的激光谐振器表面之间的距离消除光电探测器的反射噪声。表面是激光共振轴的最低点。组成:异质结构半导体激光器(BH-LD)101的一个谐振器表面105通过蚀刻方法形成,并且光电探测器(PD)102被布置为光电探测器,从表面监测激光束110,同时与这里,PD的光接收表面106朝向所谓的BH-LD 101呈凸形,使得光接收表面和激光谐振器表面之间的距离在激光谐振轴附近最短。因此,BH-LD和PD的组合导致极小的反射噪声的产生。与平面的光接收表面相比,光接收的效率得到改善,因为PD 102的凸出光接收表面106聚焦激光束110并通过其透镜作用将它们与PD 102耦合。 |
主权项 | - |
申请日期 | 1981-11-13 |
专利号 | JP1983084486A |
专利状态 | 失效 |
申请号 | JP1981181853 |
公开(公告)号 | JP1983084486A |
IPC 分类号 | H01L27/14 | H01L27/144 | H01S5/00 | H01S5/026 | H01S5/10 | H01S5/20 | H01S5/227 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/62837 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENKI KK |
推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO,KOBAYASHI ISAO,SUGIMOTO SHIGETOKI. Semiconductor laser-photodetector beam integrate element. JP1983084486A[P]. 1983-05-20. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1983084486A.PDF(159KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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