Vapor-phase growing device for compound semiconductor

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	Vapor-phase growing device for compound semiconductor
其他题名	Vapor-phase growing device for compound semiconductor
	IWAMOTO MASAMI; KONNO KUNIAKI; BETSUPU TATSUROU
	1982-02-13
专利权人	TOKYO SHIBAURA ELECTRIC CO
公开日期	1982-02-13
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To accomplish the multilayer vapor-phase growth having a steep compositional change by a method wherein the control stick, which was bent on the side where substrate support is coupled, is rotated along the center axis of a reaction tube and a crystalline substrate is shifted between two vapor-phase growing chambers for a short time. CONSTITUTION:The upper and lower vapor-phase growing chambers are provided by dividing a quartz reaction tube 2-2 using a partition plate 2-5. On the other hand, one side of a quartz control stick 2-7, extending along the center axis of the reaction tube 2-2, is bent and at the point of which, a quartz support 2-8 which is fixing the crystalline substrate 206 is coupled. Then, the substrate 2-6 is arranged on the crystal deposited region A of each vapor-phase growing chamber, wherein reaction gas having a different composition is flowing, the control stick 2-7 is rotated for the center axis at the same time, and each vapor-phase growing chamber is shifted. Through these procedures, the crystalline substrate can be shifted between each vapor-phase growing chamber in a very short time, thereby enabling to accomplish the growing of multilayer vapor-phase having a steep compositional change.
其他摘要	目的：通过以下方法实现具有急剧组成变化的多层气相生长，其中在基底支撑件连接的一侧弯曲的控制棒沿着反应管的中心轴旋转，并且晶体基底是在两个汽相生长室之间短时间移动。组成：通过用隔板2-5分割石英反应管2-2来提供上和下汽相生长室。另一方面，沿着反应管2-2的中心轴线延伸的石英控制棒2-7的一侧弯曲，并且在该点处，固定晶体衬底的石英支撑件2-8206被耦合。然后，将基板2-6布置在每个汽相生长室的晶体沉积区域A上，其中具有不同成分的反应气体正在流动，控制棒2-7同时旋转到中心轴线，并且每个气相生长室被移位。通过这些步骤，可以在非常短的时间内在每个气相生长室之间移动结晶衬底，由此能够实现具有急剧组成变化的多层气相的生长。
主权项	-
申请日期	1980-07-25
专利号	JP1982027016A
专利状态	失效
申请号	JP1980101355
公开（公告）号	JP1982027016A
IPC 分类号	C23C16/458 \| H01L21/205 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62800
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA ELECTRIC CO
推荐引用方式 GB/T 7714	IWAMOTO MASAMI,KONNO KUNIAKI,BETSUPU TATSUROU. Vapor-phase growing device for compound semiconductor. JP1982027016A[P]. 1982-02-13.