Inspection of semiconductor laser

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	Inspection of semiconductor laser
其他题名	Inspection of semiconductor laser
	TADA KATSUHISA; YAMASHITA KOJI
	1992-07-28
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1992-07-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To lower a load TS of harmonic distortion inspection and to raise an yield by applying a DC bias and low frequency modulation signal to a chip and measure harmonic distortion to select good and defective chips. CONSTITUTION:A DC bias is applied to a chip 1 with a DC power supply 4 and a modulation signal as low as about 100Hz is applied also thereto with a signal generator 5. In this case, a photodiode 6 receives a modulation beam from the chip and its electrical signal is inputted to a spectrum analyzer 7. Next, the waveforms of signal intensity in the frequency of 100Hz, signal intensity in the frequency of 200Hz and signal intensity in the frequency of 300Hz on the spectrum analyzer 7 are observed, harmonic distortion such as 2nd order distortion H2, 3rd order distortion H3, etc., is obtained and good and defective chips are selected under the condition that the measuring result of harmonic distortion are as follow; H2>60dBc, H3>70dBc. The yield of harmonic distortion inspection after packing the chip into a package is raised and thereby a load TS of harmonic distortion inspection is lowered.
其他摘要	目的：降低谐波失真检测的负载TS，并通过向芯片施加直流偏置和低频调制信号来提高产量，并测量谐波失真以选择良好和有缺陷的芯片。组成：直流偏置应用于具有直流电源4的芯片1，并且还向其施加低至约100Hz的调制信号和信号发生器5.在这种情况下，光电二极管6从芯片接收调制光束将其电信号输入到频谱分析仪7.接下来，观察频谱分析仪7上频率为100Hz，信号强度为200Hz的信号强度和频率为300Hz的信号强度波形，谐波失真在谐波失真的测量结果如下的条件下，获得诸如二阶失真H2，三阶失真H3等，并选择好的和有缺陷的芯片; H2> 60dBc，H3> 70dBc。将芯片封装到封装中之后的谐波失真检查的产率提高，从而降低了谐波失真检查的负载TS。
主权项	-
申请日期	1990-11-30
专利号	JP1992206944A
专利状态	失效
申请号	JP1990339351
公开（公告）号	JP1992206944A
IPC 分类号	H01L21/66 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62628
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	TADA KATSUHISA,YAMASHITA KOJI. Inspection of semiconductor laser. JP1992206944A[P]. 1992-07-28.