Methods and apparatus for detecting impurities in semiconductors

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	Methods and apparatus for detecting impurities in semiconductors
其他题名	Methods and apparatus for detecting impurities in semiconductors
	CARVER, GARY ERNEST; MICHALSKI, JOHN DENNIS; KOOS, GREGORY LEE
	1991-04-17
专利权人	AT&T CORP.
公开日期	1991-04-17
授权国家	欧洲专利局
专利类型	发明申请
摘要	The purpose of the invention is to detect impurities in a semiconductor wafer (20). A laser (21) forms a light beam having a high proportion of its power at an optical frequency capable of being absorbed by the impurity to be measured. The beam is split into first (25) and second (26) light components, one of which is directed at the surface of the semiconductor wafer (20) to be tested and the other at a reference semiconductor wafer (27) containing a known quantity of the impurity to be measured. The light intensities reflected from the two wafers is detected by photodetectors (29, 30) and their difference is taken as a factor in measuring the impurity density in the wafer under test. A polarizer (33) polarizes the beam such as to maximize p-type component and minimize s-type components. Reflection from each of the two wafers (20, 27) is at the principal angle.
其他摘要	本发明的目的是检测半导体晶片（20）中的杂质。激光器（21）形成光束，该光束在光学频率下具有高比例的功率，能够被待测量的杂质吸收。光束被分成第一（25）和第二（26）光分量，其中一个指向待测试的半导体晶片（20）的表面，另一个指向包含已知量的参考半导体晶片（27）要测量的杂质通过光电探测器（29,30）检测从两个晶片反射的光强度，并将它们的差异作为测量被测晶片中的杂质密度的因素。偏振器（33）使光束偏振，以使p型分量最大化并使s型分量最小化。来自两个晶片（20,27）中的每一个的反射处于主角。
主权项	A method for detecting and measuring a specific impurity in crystalline semiconductor wafers comprising the step of forming a light beam containing an optical frequency capable of being absorbed by the impurity, and characterized by: splitting the beam into first and second light components; directing the first light component at a first semiconductor wafer containing an unknown density of the impurity; directing the second light component at a second semiconductor wafer containing a known density of the impurity; detecting light of the first light component reflected from the first wafer; detecting light of the second light component reflected from the second wafer; measuring the difference of magnitude of the detected first and second light components; and using the measured magnitude difference to determine the density of the impurity contained in the first wafer.
申请日期	1990-09-17
专利号	EP0422780A2
专利状态	失效
申请号	EP1990310111
公开（公告）号	EP0422780A2
IPC 分类号	H01L21/66 \| G01N21/00 \| G01N21/21 \| G01N21/35 \| G01N21/55 \| G01N21/84 \| G01N21/88
专利代理人	-
代理机构	WATTS, CHRISTOPHER MALCOLM KELWAY, DR.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62430
专题	半导体激光器专利数据库
作者单位	AT&T CORP.
推荐引用方式 GB/T 7714	CARVER, GARY ERNEST,MICHALSKI, JOHN DENNIS,KOOS, GREGORY LEE. Methods and apparatus for detecting impurities in semiconductors. EP0422780A2[P]. 1991-04-17.

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