Semiconductor laser and inspection device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser and inspection device
其他题名	Semiconductor laser and inspection device
	KAGEYAMA, TAKEO
	2019-10-03
专利权人	QD LASER, INC.
公开日期	2019-10-03
授权国家	世界知识产权组织
专利类型	发明申请
摘要	This semiconductor laser is characterized in that: a plurality of active layers are provided, each including a first reflection layer wherein an excitation light enters and an emission light is reflected, a second reflection layer provided in the layering direction of the first reflection layer and reflecting the emission light, a light-emitting layer sandwiched in the layering direction between the first reflection layer and the second reflection layer, layered in the layering direction and emitting the emission light caused by the excitation light, and first semiconductor layers sandwiching the light-emitting layer in the layering direction; a second semiconductor layer is provided between the first semiconductor layers of adjacent active layers of the plurality of active layers, and has a second band gap energy that is greater than the first band gap energy of first semiconductor layers; and, the closer to the first reflection layer side, the shorter the layering direction widths of the active layers of the plurality of active layers become.
其他摘要	该半导体激光器的特征在于：设置多个有源层，每个有源层包括第一反射层和第二反射层，在第一反射层中激发光进入并且反射发射光，第二反射层沿第一反射层的层叠方向设置并反射。发射光，在层叠方向上被夹在第一反射层与第二反射层之间，在层叠方向上层叠并发射由激发光引起的发射光的发光层，以及将发光夹在中间的第一半导体层沿分层方向分层；第二半导体层设置在多个有源层中的相邻有源层的第一半导体层之间，并且具有大于第一半导体层的第一带隙能量的第二带隙能量。并且，越靠近第一反射层侧，多个活性层中的活性层的层叠方向宽度越短。
主权项	-
申请日期	2019-02-06
专利号	WO2019187666A1
专利状态	未确认
申请号	PCT/JP2019/004238
公开（公告）号	WO2019187666A1
IPC 分类号	H01S5/183 \| A61B3/10 \| H01S5/34
专利代理人	KATAYAMA, SHUHEI
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62412
专题	半导体激光器专利数据库
作者单位	QD LASER, INC.
推荐引用方式 GB/T 7714	KAGEYAMA, TAKEO. Semiconductor laser and inspection device. WO2019187666A1[P]. 2019-10-03.