Transistor laser optical switching and memory techniques and devices

OPT OpenIR > 半导体激光器专利数据库

	Transistor laser optical switching and memory techniques and devices
其他题名	Transistor laser optical switching and memory techniques and devices
	FENG, MILTON; HOLONYAK, JR., NICK; WU, MONG-KAI
	2016-01-21
专利权人	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
公开日期	2016-01-21
授权国家	美国
专利类型	发明申请
摘要	A ring cavity light-emitting transistor device, including: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with the base layer, said collector layer, and said emitter layer, the base metalization including at least one annular ring coupled with a surface of the base layer; and an annular ring-shaped optical resonator in a region of the semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to the base, collector, and emitter metalizations causes light emission in the base layer that propagates in the ring-shaped optical resonator cavity.
其他摘要	一种环形腔发光晶体管器件，包括：第二导电类型的半导体集电极和发射极层之间的第一导电类型的半导体基极层的平面半导体结构;基极，集电极和发射极金属化分别与基极层，所述集电极层和所述发射极层耦合，基极金属化包括至少一个与基极层表面耦合的环形圈;半导体结构区域中的环形环形光学谐振器，通常包括基极和发射极区的界面;因此，相对于基极，集电极和发射极金属化的电信号的施加导致在环形光学谐振腔中传播的基层中的光发射。
主权项	A ring cavity light-emitting transistor device, comprising: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with said base layer, said collector layer, and said emitter layer, said base metallization comprising at least one annular ring coupled with a surface of said base layer; and an annular ring-shaped optical resonator in a region of said semiconductor structure generally including the interface of the base and emitter layers; whereby application of electrical signals with respect to said base, collector, and emitter metalizations causes light emission in said base layer that propagates in said ring-shaped optical resonator cavity.
申请日期	2015-05-26
专利号	US20160020579A1
专利状态	授权
申请号	US14/545587
公开（公告）号	US20160020579A1
IPC 分类号	H01S5/062 \| G11C7/10 \| G11C13/04 \| H01L29/08 \| H01L29/417 \| H01S5/10 \| H01S5/34 \| H01S5/62
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62019
专题	半导体激光器专利数据库
作者单位	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
推荐引用方式 GB/T 7714	FENG, MILTON,HOLONYAK, JR., NICK,WU, MONG-KAI. Transistor laser optical switching and memory techniques and devices. US20160020579A1[P]. 2016-01-21.