Process for producing ultraviolet light emitting elements, and ultraviolet light emitting element

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	Process for producing ultraviolet light emitting elements, and ultraviolet light emitting element
其他题名	Process for producing ultraviolet light emitting elements, and ultraviolet light emitting element
	MURAI, AKIHIKO; YASUDA, MASAHARU; GOTO, KOJI; TAKASE, YUJI
	2015-09-24
专利权人	PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
公开日期	2015-09-24
授权国家	世界知识产权组织
专利类型	发明申请
摘要	Provided are: a process for producing ultraviolet light emitting elements which makes it possible to heighten the mass productivity and production yield; and an ultraviolet light emitting element. In the process for producing ultraviolet light emitting elements (B1), a wafer (30) obtained by superposing a nitride semiconductor layer (20) of a multilayer structure on a first surface (10a) of a sapphire wafer (10) is divided into the individual ultraviolet light emitting elements (B1). The process for producing ultraviolet light emitting elements (B1) includes a grooving step in which the wafer (30) is irradiated with laser light from the nitride semiconductor layer (20) side to form grooves (31) that extend to somewhere in the thickness direction of the sapphire wafer (10), a grinding step in which the wafer (30) is ground from the second surface (10b) side of the sapphire wafer (10) so that the thickness of the wafer (30) is reduced, and a dividing step in which the wafer (30) is divided along the grooves (31). The process further includes, between the grooving step and the grinding step, a debris removal step in which debris on the surface of the nitride semiconductor layer (20) of the wafer (30) is removed with a pressure-sensitive adhesive tape (40).
其他摘要	本发明提供一种紫外线发光元件的制造方法，能够提高批量生产率和产量。和紫外发光元件。在制造紫外发光元件（B1）的过程中，通过将多层结构的氮化物半导体层（20）叠加在蓝宝石晶片（10）的第一表面（10a）上而获得的晶片（30）被分成各个紫外发光元件（B1）。制造紫外发光元件（B1）的方法包括开槽步骤，其中用来自氮化物半导体层（20）侧的激光照射晶片（30）以形成延伸到厚度方向某处的凹槽（31）在蓝宝石晶片（10）的研磨步骤中，从蓝宝石晶片（10）的第二表面（10b）侧研磨晶片（30），以减小晶片（30）的厚度，并且分割步骤，其中晶片（30）沿凹槽（31）分开。该方法还包括在开槽步骤和研磨步骤之间的碎屑去除步骤，其中用压敏胶带（40）去除晶片（30）的氮化物半导体层（20）的表面上的碎屑。。
主权项	-
申请日期	2014-10-16
专利号	WO2015140849A1
专利状态	未确认
申请号	PCT/JP2014/005244
公开（公告）号	WO2015140849A1
IPC 分类号	H01L33/32 \| B23K26/364 \| H01L21/301 \| H01S5/343
专利代理人	NISHIKAWA, YOSHIKIYO ET AL.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/61969
专题	半导体激光器专利数据库
作者单位	PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
推荐引用方式 GB/T 7714	MURAI, AKIHIKO,YASUDA, MASAHARU,GOTO, KOJI,et al. Process for producing ultraviolet light emitting elements, and ultraviolet light emitting element. WO2015140849A1[P]. 2015-09-24.