Quantum-dot laser diode

OPT OpenIR > 半导体激光器专利数据库

	Quantum-dot laser diode
其他题名	Quantum-dot laser diode
	RAFAILOV, EDIK U.; ZOLOTOVSKAYA, SVETLANA; SOKOLOVSKI, SERGEI
	2011-12-22
专利权人	UNIVERSITY OF DUNDEE
公开日期	2011-12-22
授权国家	美国
专利类型	发明申请
摘要	Aspects of the present disclosure relate to the field of laser technology, specifically semiconductor lasers, and to novel biomedical applications of such lasers, including novel methods of photodynamic therapy. Exemplary embodiments of the present disclosure include a semiconductor laser diode having an active region having a gain medium with one or more InGaAs/InAs quantum dot layers; and wherein the laser diode can be arranged in operation to emit laser light having a central wavelength within spectral range of wave lengths. The present embodiments further include a method of directly forming a reactive oxygen species (ROS), the method including exposing a medium having a potential source of ROS to a semiconductor laser diode, the semiconductor laser diode configured to emit laser light having a central wavelength within the spectral range.
其他摘要	本公开的各方面涉及激光技术领域，特别是半导体激光器，以及这种激光器的新型生物医学应用，包括光动力治疗的新方法。本公开的示例性实施例包括半导体激光二极管，其具有有源区，该有源区具有带有一个或多个InGaAs / InAs量子点层的增益介质;并且其中激光二极管可以在操作中布置以发射具有波长光谱范围内的中心波长的激光。本发明实施方案还包括直接形成活性氧（ROS）的方法，该方法包括将具有潜在ROS源的介质暴露于半导体激光二极管，该半导体激光二极管配置成发射具有中心波长的激光。光谱范围。
主权项	A semiconductor laser diode comprising: an active region having a gain medium comprising one or more InGaAs/InAs quantum dot layers; and wherein the laser diode is arranged in operation to emit laser light having a central wavelength within the spectral range of approximately 1250 to 1280 nm.
申请日期	2011-06-20
专利号	US20110313407A1
专利状态	失效
申请号	US13/164452
公开（公告）号	US20110313407A1
IPC 分类号	A61B18/20 \| B01J19/12 \| H01S5/323 \| B82Y20/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/61716
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF DUNDEE
推荐引用方式 GB/T 7714	RAFAILOV, EDIK U.,ZOLOTOVSKAYA, SVETLANA,SOKOLOVSKI, SERGEI. Quantum-dot laser diode. US20110313407A1[P]. 2011-12-22.