Optically pumped solid-state laser and lighting system comprising said solid-state laser

OPT OpenIR > 半导体激光器专利数据库

	Optically pumped solid-state laser and lighting system comprising said solid-state laser
其他题名	Optically pumped solid-state laser and lighting system comprising said solid-state laser
	WEICHMANN, ULRICH; RONDA, CORNELIS REINDER; OPITZ, JOACHIM; SCHMIDT, PETER JOSEF
	2012-01-26
专利权人	KONINKLIJKE PHILIPS ELECTRONICS N V
公开日期	2012-01-26
授权国家	美国
专利类型	发明申请
摘要	The invention relates to a solid-state laser device (1) comprising a gain medium (10) essentially having a main phase of a solid state host material (15) which is doped with rare-earth ions. According to the invention at least a portion of the rare-earth ions are Ce3+-ions (19) with at least one 4f-state (16, 17) and at least one 5d-band (18) energetically between the highest valence state and the lowest conduction state of the host material (15), whereinthe highest 4f-state (17) and the bottom edge of the 5d-band (18) have a first energy-level distance (Δ1) andthe lowest 4f-state (16) and the upper edge of the 5d-band (18) have a second energy-level distance (Δ2),wherein the host material (15) is selected such that the resulting gain medium (10) has an energy range (20) devoid of unoccupied states for disabling excited state absorption, the energy range (20) is located betweena lower energy (21) which is by the value of the first energy level distance (Δ1) above the bottom edge of the 5d-band (18) anda higher energy (22) which is by the value of the second energy level distance (Δ2) above the upper edge of the 5d-band (18). The invention further relates to a corresponding lighting system comprising at least one solid-state laser device (1).
其他摘要	本发明涉及一种固态激光器件（1），其包括增益介质（10），该增益介质基本上具有掺杂有稀土离子的固态主体材料（15）的主相。根据本发明，至少一部分稀土离子是Ce 3+离子（19），其中至少一个4f-状态（16,17）和至少一个5d-带（18）在能值最高的价态和主体材料（15）的最低导电状态，其中最高4f状态（17）和5d带（18）的下边缘具有第一能级距离（Δ1）和最低4f状态（16）并且5d波段（18）的上边缘具有第二能级距离（Δ2），其中选择主体材料（15）使得得到的增益介质（10）具有不存在的能量范围（20）。为了禁止激发态吸收，未被占用的状态，能量范围（20）位于较低能量（21）之间，该能量是在5d波段（18）的下边缘之上的第一能级距离（Δ1）的值和更高的能量（22）是在5d波段（18）的上边缘上方的第二能级距离（Δ2）的值。本发明还涉及包括至少一个固态激光器装置（1）的相应照明系统。
主权项	Solid-state laser device comprising a gain medium essentially having a main phase of a solid state host material which is doped with rare-earth ions, wherein at least a portion of the rare-earth ions are Ce3+-ions with at least one 4f-state and at least one 5d-band energetically between the highest valence state and the lowest conduction state of the host material, wherein the highest 4f-state and the bottom edge of the 5d-band have a first energy-level distance and the lowest 4f-state and the upper edge of the 5d-band have a second energy-level distance, wherein the host material is selected such that the resulting gain medium has an energy range devoid of unoccupied states for disabling excited state absorption, the energy range is located between a lower energy which is by the value of the first energy level distance above the bottom edge of the 5d-band and a higher energy which is by the value of the second energy level distance above the upper edge of the 5d-band.
申请日期	2010-03-15
专利号	US20120020073A1
专利状态	失效
申请号	US13/258618
公开（公告）号	US20120020073A1
IPC 分类号	F21V9/00 \| H01S5/02
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/61616
专题	半导体激光器专利数据库
作者单位	KONINKLIJKE PHILIPS ELECTRONICS N V
推荐引用方式 GB/T 7714	WEICHMANN, ULRICH,RONDA, CORNELIS REINDER,OPITZ, JOACHIM,et al. Optically pumped solid-state laser and lighting system comprising said solid-state laser. US20120020073A1[P]. 2012-01-26.