Surface-emitting laser array, optical scanning device, and image forming device

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	Surface-emitting laser array, optical scanning device, and image forming device
其他题名	Surface-emitting laser array, optical scanning device, and image forming device
	SATO, SHUNICHI; ITOH, AKIHIRO; SUGAWARA, SATORU; SHOUJI, HIROYOSHI
	2009-12-03
专利权人	RICOH COMPANY, LTD.
公开日期	2009-12-03
授权国家	美国
专利类型	发明申请
摘要	A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.
其他摘要	表面发射激光器阵列包括多个表面发射激光器元件。每个表面发射激光器元件包括形成在基板上的第一反射层，形成为与第一反射层接触并包含有源层的谐振器，以及形成在第一反射层上方并与谐振器接触的第二反射层。第二反射层包含选择性氧化层。第一反射层在有源层侧包含至少一个低折射率层，其氧化速率等于或大于第二反射层中包含的选择性氧化层的氧化速率。谐振器由至少含有In的AlGaInPAs基材料制成。台面结构的底部位于选择性氧化层下方和第一反射层上方。
主权项	A surface-emitting laser array including a plurality of surface-emitting laser elements, each of the plurality of surface-emitting laser elements comprising: a first reflection layer formed on a substrate to constitute a semiconductor Bragg reflector; a resonator formed in contact with the first reflection layer and containing an active layer; and a second reflection layer formed over the first reflection layer and in contact with the resonator to constitute the semiconductor Bragg reflector, the second reflection layer containing a selective oxidation layer therein, wherein the first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer, the resonator is made of an AlGaInPAs base material containing at least In, and a bottom of a mesa structure in each surface-emitting laser element is located under the selective oxidation layer and over the first reflection layer.
申请日期	2007-08-20
专利号	US20090295902A1
专利状态	失效
申请号	US12/090467
公开（公告）号	US20090295902A1
IPC 分类号	B41J2/435 \| H01S5/183 \| H01S3/10 \| H01S5/187 \| H01L21/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/61440
专题	半导体激光器专利数据库
作者单位	RICOH COMPANY, LTD.
推荐引用方式 GB/T 7714	SATO, SHUNICHI,ITOH, AKIHIRO,SUGAWARA, SATORU,et al. Surface-emitting laser array, optical scanning device, and image forming device. US20090295902A1[P]. 2009-12-03.