Laser diode, semiconductor light-emitting device, and method of production thereof

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	Laser diode, semiconductor light-emitting device, and method of production thereof
其他题名	Laser diode, semiconductor light-emitting device, and method of production thereof
	HIROAKI, ABE
	2002-12-04
专利权人	SONY CORPORATION
公开日期	2002-12-04
授权国家	欧洲专利局
专利类型	发明申请
摘要	A laser diode capable of reducing an operating current and thereby improving long term reliability and able to be produced by a simpler process than in the prior art, a semiconductor light emitting device and a method of production thereof are provided, wherein a first clad layer (37), an active layer (38), and a second clad layer (39) are formed on a substrate (30), a third clad layer (41) and a contact layer (43) are formed on a current injection stripe region thereon, an electrode (45) is formed so as to be connected to the second clad layer (39) in regions other than the current injection stripe region and to be connected to the contact layer (43), and, at the time of emitting laser light from a laser light oscillation region by injection of a first current to the electrode (45) via the contact layer (43) by application of voltage, a second current which is smaller than the first current is injected in regions other than the current injection stripe region via the second clad layer (39), so that a laser diode is configured wherein currents at ends of the laser light oscillation region are controlled to generate self pulsation.
其他摘要	本发明提供一种能够降低工作电流并由此提高长期可靠性并且能够通过比现有技术更简单的工艺生产的激光二极管，半导体发光器件及其制造方法，其中第一包覆层（37），在基板（30）上形成有源层（38）和第二包层（39），在其上的电流注入条纹区上形成第三包层（41）和接触层（43）形成电极（45），以便在除电流注入条纹区域以外的区域中连接到第二包层（39）并连接到接触层（43），并且在发射激光时来自激光振荡区域的光通过施加电压经由接触层（43）向电极（45）注入第一电流，在电流注入以外的区域中注入小于第一电流的第二电流条纹区域通过第二包层（39），使得配置激光二极管，其中控制激光振荡区域的端部处的电流以产生自脉冲。
主权项	A laser diode comprising: a first clad layer of a first conductivity type formed on a substrate; an active layer formed at an upper layer of said first clad layer; a second clad layer of a second conductivity type formed at an upper layer of said active layer; a third clad layer of the second conductivity type formed at an upper layer of said second clad layer in a current injection stripe region; a contact layer formed at an upper layer of said third clad layer; and an electrode formed so as to connect said second clad layer in regions other than said current injection stripe region and to connect said contact layer; whereby when a first current is injected from said electrode via said contact layer by applying a predetermined voltage to said electrode and laser light is emitted from a laser light oscillation region near said active layer, a second current which is smaller than said first current is injected in regions other than said current injection stripe region from said electrode via said second clad layer and currents at ends of said laser light oscillation region are controlled for self pulsation.
申请日期	2001-08-08
专利号	EP1182751A3
专利状态	失效
申请号	EP2001402138
公开（公告）号	EP1182751A3
IPC 分类号	G11B7/125 \| G11B7/22 \| H01S5/042 \| H01S5/062 \| H01S5/065 \| H01S5/22 \| H01S5/223 \| H01S5/40 \| H01S5/06
专利代理人	-
代理机构	THÉVENET, JEAN-BRUNO
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/60696
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	HIROAKI, ABE. Laser diode, semiconductor light-emitting device, and method of production thereof. EP1182751A3[P]. 2002-12-04.

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